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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chen, WKSubject: search.filters.subject.MOVPE

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Now showing 1 - 9 of 9
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    Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
    (1997-12-15)
    Chen, WK
    ;
    Pan, YC
    ;
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WH
    We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.
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    An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy
    (1998-06-01)
    Ou, J
    ;
    Chen, WK
    ;
    Lin, HC
    ;
    Pan, YC
    ;
    Lee, MC
    We carried out a systematic study on the solid incorporation of InGaN under various growth conditions using metalorganic vapor phase epitaxy (MOVPE). The solid distribution of InGaN was found to be very sensitive to the growth temperature, and the TMGa and TMIn flow rates. Experimental results indicated that at low Ga flow rates InGaN growth is essentially governed by thermodynamic factors, whereas at high growth rate the InGaN solid concentration is determined merely by the vapor composition in the gas phase. In regard to the effect of TMIn flow rates on InGaN growth, it was found that once In droplets form on the surface, the In growth efficiency correspondingly decreases significantly; accounting for the low In solid concentration in InGaN at high TMIn flow rates.
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    Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy
    (1998-09-01)
    Chen, WK
    ;
    Lin, HC
    ;
    Pan, YC
    ;
    Ou, J
    ;
    Shu, CK
    We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600 degrees C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase tvas found to be dominant in the deposited InN film.
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    Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy
    (1999-02-01)
    Pan, YC
    ;
    Lee, WH
    ;
    Shu, CK
    ;
    Lin, HC
    ;
    Chiang, CI
    Indium nitride films have been successfully grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) using TMIn and NH3 as source precursors. Experimental results indicated that pregrowth treatments, such as buffer layer growth, nitridation temperature and nitridation duration have dramatic effects on the growth of the InN films. For films nitridated at 1,000 degrees C for 40 min without any buffer layer growth, we obtained an InN film quality with Hall mobility, carrier concentration and line width of Raman E-2 mode of 270 cm(2)/V.s, 5 x 10(19) cm(-3) and 4.5 cm(-1), respectively, which is among the best quality ever reported for such type of film grown by MOVPE.
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    A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN
    (1999-09-01)
    Ou, J
    ;
    Pan, YC
    ;
    Lee, WH
    ;
    Shu, CK
    ;
    Lin, HC
    A thermodynamic analysis tailored with a high-temperature parameter was performed for metalorganic vapor phase epitaxial (MOVPE) growth of InxGa1-xN alloys. Accordingly, a series of InGaN samples were prepared under various input In flow rates and growth temperatures. Theoretical results indicate that the In solid concentration tends to increase with increasing In flow rate and with decreasing temperature, whereas the metal droplets form more easily on the surface at lower growth temperatures and higher In fluxes, which are in good agreement with our experimental data.
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    Structure study of GaN : Mg films by X-ray absorption near-edge structure spectroscopy
    (2001)
    Pan, YC
    ;
    Wang, SF
    ;
    Lee, WH
    ;
    Lin, WC
    ;
    Chiang, CI
    X-ray absorption near-edge fine structure (XANES) spectroscopy from N K-edge measurement was employed to examine the crystal structure of metallorganic vapor phase epitaxy (MOVPE) grown Mg-doped GaN (GaN:Mg) films. The result showed that Mg doping induced crystal stacking faults to occur at the film surface causing a fraction of hexagonal phase to transform into cubic phase. As a consequence of this, XANES spectra of the films were found to vary with the dopant concentration and to lose pure hexagonal character when examined with the incident angle theta of the X-ray beam. Spectral characteristic variation between the two phases allows us to estimate the phase composition of the samples. The trend of increasing cubic phase component in dopant concentration is consistent with the observed Normaski optical micrograph. (C) 2001 Published by Elsevier Science Ltd.
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    Long-term photocapacitance decay behavior in undoped GaN
    (2001-10-01)
    Chung, HM
    ;
    Pan, YC
    ;
    Chuang, WC
    ;
    Chen, NC
    ;
    Tsai, CC
    We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 x 10(-27) cm(2) were retrieved. These are interpreted as the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.
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    Gallium K-edge EXAFS study of GaN : Mg films
    (2000)
    Pan, YC
    ;
    Wang, SF
    ;
    Lee, WH
    ;
    Lin, WC
    ;
    Shu, CK
    Ga K-edge extended X-ray absorption fine structure (EXAFS) measurement was employed to investigate the local structure of GaN:Mg films grown by metalorganic vapor phase epitaxy (MOVPE) with various Cp,Mg dopant flow rates using both in-plane and out-of-plane polarization modes of X-ray. The near edge absorption spectra were found to depend on X-ray polarization strongly for undoped GaN sample and weakly to minutely for heavily Mg-doped and amorphous films. The results indicate Mg incorporation modifies the local structure around the absorber Ga atom and, hence, alters the molecular orbital electron transition of GaN sample. EXAFS analysis showed both vacancy and Mg-interstitial defects contribute to the reduction of coordination numbers along the hexagonal c-axis of GaN:Mg film.
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    Item type:Item,
    Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
    (1997-12-15)
    Chen, WK
    ;
    Pan, YC
    ;
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WH
    We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.