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Author: search.filters.author.Chen, WKSubject: search.filters.subject.optical properties

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Now showing 1 - 4 of 4
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    Optical and electrical investigations of isoelectronic In-doped GaN films
    (2000)
    Shu, CK
    ;
    Lee, WH
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    Pan, YC
    ;
    Chen, CC
    ;
    Lin, HC
    The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects. (C) 2000 Elsevier Science Ltd. All rights reserved.
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    Study of linear and nonlinear optical properties of distorted Ti-O-6 perovskite structure in BaxSr1-xTiO3
    (2000-06-01)
    Chen, WK
    ;
    Cheng, CM
    ;
    Huang, JY
    ;
    Hsieh, WF
    ;
    Tseng, TY
    We report the linear and nonlinear optical properties of sol-gel prepared BaxSr1-xTiO3 (BST) crystalline powders. The results from powder X-ray diffraction, birefringence, and second-order optical nonlinearity measurements indicate that the paraelectric-ferroelectric phase transition of Ba0.75Sr0.25TiO3 occurs near room temperature. The second-order optical nonlinearity of the ferroelectric BST is about 7.9 pm/V. The index of refraction, n = 2.2, and birefringence, Delta n(B) similar to 0.05, are also appropriate for practical nonlinear optical applications. (C) 2000 Elsevier Science Ltd. All rights reserved.
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    Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
    (2001-04-01)
    Shu, CK
    ;
    Chen, HH
    ;
    Lee, WH
    ;
    Pan, YC
    ;
    Huang, HY
    Photoluminescence dynamic responses of a heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy have been investigated. As the probe power density increased from 2.5 to 925 W/cm(2), a Mg-related emission band shifted from 2.82 to 3.16 eV revealing characteristics of donor-acceptor pair recombination. The intensity evolution also showed slow decay that suggests the metastable emission behavior. A simple potential barrier model was proposed to occur between the Mg related deep levels and common Mg acceptor level, which impedes electron relaxation and thus slows down the luminescence decay. From the variation of decay time constant with temperature. a barrier energy was deduced to be about 69 meV which is very close to the electrical result of 68 meV.
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    Raman scattering in ternary AlAsxSb1-x films
    (1998)
    Lin, HC
    ;
    Ou, J
    ;
    Hsu, CH
    ;
    Chen, WK
    ;
    Lee, MC
    Thin films of the ternary AlAsxSb1-x alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mixed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV which are attributable to the E-0 and E-1 transitions of AlAs and AlSb. (C) 1998 Elsevier Science Ltd. All rights reserved.