<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, WK

Search Results

Now showing 1 - 10 of 59
  • Thumbnail Image
    Item type:Item,
    Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
    (1997-12-15)
    Chen, WK
    ;
    Pan, YC
    ;
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WH
    We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.
  • Thumbnail Image
    Item type:Item,
    Photoluminescence studies of GaN films of different buffer layer and doping concentration
    (1998-02-01)
    Shen, CC
    ;
    Shu, CK
    ;
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WK
    Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of similar to-4 x 10(-4) eV.K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n(1/3). We also obtained a concentration coefficient of 2.34 x 10(-4) eV.cm and a band gap energy of 3.426 eV in the undoped GaN film.
  • Thumbnail Image
    Item type:Item,
    Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursor
    (1996-10-01)
    Chen, WK
    ;
    Ou, JH
    ;
    Hsu, CH
    ;
    電子物理學系
    ;
    Department of Electrophysics
    We have investigated the effects of growth temperature on the solid incorporation of AlAsSb epilayers grown LJ metalorganic vapor-phase epitaxy using TMAl, TBAs and TMSb as source precursors. The solid incorporation of AlAsSb was found to be strongly affected by the pyrolysis reactions and kinetics of the source precursors, in particular, TMAl and TBAs. Our experimental results indicated that the, Al incorporation efficiency increases with the growth temperature and saturates at temperatures above similar to 625 degrees C. On the other hand, the growth behavior of As is anomalous: the As incorporation efficiency increases initially with growth temperature, and decreases monotonously at temperatures above similar to 550 degrees C. The reduced As incorporation efficiency at high temperatures may be closely related to the beta-elimination process of TBAs, and to the formation of adducts in the gas phase.
  • Thumbnail Image
    Item type:Item,
    Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic
    (1996-09-15)
    Lee, WI
    ;
    Young, RL
    ;
    Chen, WK
    ;
    電子物理學系
    ;
    Department of Electrophysics
    A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.
  • Thumbnail Image
    Item type:Item,
    Photoluminescence studies of GaN films of different buffer layer and doping concentration
    (1998-02-01)
    Shen, CC
    ;
    Shu, CK
    ;
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WK
    Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of similar to-4 x 10(-4) eV.K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n(1/3). We also obtained a concentration coefficient of 2.34 x 10(-4) eV.cm and a band gap energy of 3.426 eV in the undoped GaN film.
  • Thumbnail Image
    Item type:Item,
    Phonon-plasmon interaction in GaN films studied by Raman scattering
    (1998-02-01)
    Shen, CC
    ;
    Shu, CK
    ;
    Lin, HC
    ;
    Chen, WK
    ;
    Chen, WH
    GaN films of different buffer thicknesses (from 0 to 600 Angstrom) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8 x 10(16) to 5 x 10(17) cm(-3) as determined by Hall measurements. The Raman scattering reveals that the A(1)(LO) mode shifts from 733 to 740 cm(-1) as a result of the phonon-plasmon interaction.
  • Thumbnail Image
    Item type:Item,
    An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy
    (1998-06-01)
    Ou, J
    ;
    Chen, WK
    ;
    Lin, HC
    ;
    Pan, YC
    ;
    Lee, MC
    We carried out a systematic study on the solid incorporation of InGaN under various growth conditions using metalorganic vapor phase epitaxy (MOVPE). The solid distribution of InGaN was found to be very sensitive to the growth temperature, and the TMGa and TMIn flow rates. Experimental results indicated that at low Ga flow rates InGaN growth is essentially governed by thermodynamic factors, whereas at high growth rate the InGaN solid concentration is determined merely by the vapor composition in the gas phase. In regard to the effect of TMIn flow rates on InGaN growth, it was found that once In droplets form on the surface, the In growth efficiency correspondingly decreases significantly; accounting for the low In solid concentration in InGaN at high TMIn flow rates.
  • Thumbnail Image
    Item type:Item,
    Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
    (1998-08-03)
    Shu, CK
    ;
    Ou, J
    ;
    Lin, HC
    ;
    Chen, WK
    ;
    Lee, MC
    The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property. (C) 1998 American Institute of Physics.
  • Thumbnail Image
    Item type:Item,
    Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy
    (1998-09-01)
    Chen, WK
    ;
    Lin, HC
    ;
    Pan, YC
    ;
    Ou, J
    ;
    Shu, CK
    We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600 degrees C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase tvas found to be dominant in the deposited InN film.
  • Thumbnail Image
    Item type:Item,
    Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
    (1998-11-02)
    Lee, MC
    ;
    Lin, HC
    ;
    Pan, YC
    ;
    Shu, CK
    ;
    Ou, J
    Thin InN films were deposited on the (0001) sapphire substrate at various temperatures from 325 to 600 degrees C by metalorganic vapor phase epitaxy. We used Raman scattering and x-ray diffraction to investigate the film properties and crystalline structures. Significant line broadening, softening and intensity evolution were observed at the growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of the mixed hexagonal and cubic structures and the related dislocation defects. As the growth temperature is further increased, the hexagonal phase is found to be dominant in the deposited InN film. (C) 1998 American Institute of Physics. [S0003-6951(98)00744-X].