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Reactive Sputtering Deposition of Epitaxial TiC Film on Si (100) Substrate
(2020-07-01)
Fang, Yu-Siang
;
Thi Hien Do
;
Chiu, Kun-An
;
Chen, Wei-Chun
;
Chang, Li
Epitaxial (100) TiC film deposition on Si (100) substrate by direct current magnetron reactive sputtering of a metallic Ti target with 3%-6% CH4 in Ar gas was investigated. X-ray diffraction and cross-sectional scanning transmission electron microscopy (STEM) reveal that epitaxial cubic TiC can be grown on the Si substrate by domain matching epitaxy in 5/4 ratio with the epitaxial relationship of TiC (100)[0 (1) over bar1] // Si (100)[0 (1) over bar 1]. For sputtering with 3% and 4% CH4, the deposited films are found to consist of both TiC and metallic Ti phases. Increasing the CH4 flow ratio to 5% results in a deposited film completely consisting of TiC without metallic Ti phase. The crystallinity of the deposited TiC is also improved with increasing the CH4 ratio to 5%. X-ray photoelectron spectroscopy shows that the [C]/[Ti] atomic ratio in TiC is nearly close to 1 for growth with 5% CH4 flow ratio and above. The measured electrical resistivities of the deposited films also increase from 41 to 153 mu omega center dot cm with increasing the CH4 ratio from 3% to 6%. With film growth beyond 50 nm thickness, it is shown that some disoriented TiC grains are formed.
Epitaxy of m-plane ZnO on (112) LaAlO3 substrate
(2009-05-01)
Ho, Yen-Teng
;
Wang, Wei-Lin
;
Peng, Chun-Yen
;
Chen, Wei-Chun
;
Liang, Mei-Hui
Heteroepitaxial growth of non-polar in-plane (10 (1) over bar0) ZnO has been demonstrated on (112) LaAlO3 single crystal substrates using the pulsed laser deposition method. X-ray diffraction, reflection high energy electron diffraction, and cross-sectional transmission electron microscopy with selected-area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 (1) over bar0)(ZnO) parallel to (112)(LAO), (11 (2) over bar0)(ZnO) parallel to ((1) over bar(1) over bar1)(LAO), and [0001](ZnO) parallel to [(1) over bar 10](LAO). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Substrate engineering of LaAlO3 for non-polar ZnO growth
(2010-03-31)
Ho, Yen-Teng
;
Wang, Wei-Lin
;
Peng, Chun-Yen
;
Chen, Wei-Chun
;
Liang, Mei-Hui
We demonstrate that growth of non-polar ZnO in a-plane and m-plane can be achieved through substrate engineering of LaAlO3 with (001) and (112) surface X-ray diffraction, reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal that a-plane ZnO on LaAlO3 (001) consists of two types of domains perpendicular to each other with in-plane orientation relationships of [000](ZnO)//[1 (1) over bar0](LAO) and [1 (1) over tilde 00](ZnO)//[1 (1) over bar0](LAO) Single domain epitaxy of m-plane ZnO on LaAlO3 (112) can be obtained with in-plane orientation relationships of (10 (1) over bar0)(ZnO)//(112)(LAO), [0001](ZnO)//[(1) over bar 10](LAO) and [1 (2) over bar 10](ZnO)//[(1) over bar(1) over bar1](LAO). (C) 2009 Elsevier B.V All rights reserved
Growth of Semipolar InN(10(1)over-bar3) on LaAlO3(112) Substrate
(2011-04-01)
Chen, Wei-Chun
;
Tian, Jr-Sheng
;
Wang, Wei-Lin
;
Ho, Yen-Teng
;
Chang, Li
In this study, we report the growth and characterization of semipolar (10 (1) over bar3) InN films grown on LaAlO3(112) substrate by metalorganic molecular beam epitaxy. InN films were grown at various substrate temperatures in the range of 465-540 degrees C. Structural and optical properties of semipolar InN were investigated by high resolution X-ray diffraction, scanning electron microscopy, and photoluminescence measurements. The results show that semipolar (10 (1) over bar3) InN layers can be grown at 510 degrees C with the full-width at half maximum of the X-ray rocking curve about 1400 arcsec and electron mobility of 494 cm(2)V(-1)s(-1). (C) 2011 The Japan Society of Applied Physics
Epitaxial growth of semipolar InN(10(1)over-tilde3) on LaAlO3 substrate: Epitaxial relationship analysis
(2017-05-01)
Chen, Wei-Chun
;
Kuo, Shou-Yi
;
Tian, Jr. -Sheng
;
Wang, Wei-Lin
;
Lai, Fang-I
Epitaxial semipolar InN(10 (1) over tilde3) crystals were grown on a LaAlO3(112) substrate using radio frequency plasma-assisted molecular beam epitaxy without any interlayer. The lattice mismatch between InN and LaAlO3 was estimated to be % 7.75% along the [1 (2) over tilde 10](InN) direction and 0.2% along the [(3) over tilde 032](InN) direction. The InN film is epitaxic with the LaAlO3 substrate, with orientation relationships between InN(10 (1) over tilde3) parallel to LaAlO3(112) and [1 (2) over tilde 10](InN) parallel to [11 (1) over tilde](LAO). InN grown on LaAlO3(112) appears (10 (1) over tilde3) plane orientated, with two types of domains. Semipolar InN(10 (1) over tilde3) layers can be grown at 510 degrees C and show X-ray rocking curve FWHMs of 1830 and 1408 arcsec for InN(0002) and InN(10 (1) over tilde3), respectively. However, InN grown at 510 degrees C has the highest peak intensity and the narrowest FWHM of the prepared samples, indicating high-quality crystal growth. (C) 2017 The Japan Society of Applied Physics
Lucidone suppresses dengue viral replication through the induction of heme oxygenase-1
(2018-01-01)
Chen, Wei-Chun
;
Tseng, Chin-Kai
;
Lin, Chun-Kuang
;
Wang, Shen-Nien
;
Wang, Wen-Hung
Dengue virus (DENV) infection causes life-threatening diseases such as dengue hemorrhagic fever and dengue shock syndrome. Currently, there is no effective therapeutic agent or vaccine against DENV infection; hence, there is an urgent need to discover anti-DENV agents. The potential therapeutic efficacy of lucidone was first evaluated in vivo using a DENV-infected Institute of Cancer Research (ICR) suckling mouse model by monitoring body weight, clinical score, survival rate, and viral titer. We found that lucidone effectively protected mice from DENV infection by sustaining survival rate and reducing viral titers in DENV-infected ICR suckling mice. Then, the anti-DENV activity of lucidone was confirmed by western blotting and quantitative-reverse-transcription-polymerase chain reaction analysis, with an EC50 value of 25 +/- 3 mu M. Lucidone significantly induced heme oxygenase-1 (HO-1) production against DENV replication by inhibiting DENV NS2B/3 protease activity to induce the DENV-suppressed antiviral interferon response. The inhibitory effect of lucidone on DENV replication was attenuated by silencing of HO-1 gene expression or blocking HO-1 activity. In addition, lucidone-stimulated nuclear factor erythroid 2-related factor 2 (Nrf2), which is involved in transactivation of HO-1 expression for its anti-DENV activity. Taken together, the mechanistic investigations revealed that lucidone exhibits significant anti-DENV activity in in vivo and in vitro by inducing Nrf2-mediated HO-1 expression, leading to blockage of viral protease activity to induce the anti-viral interferon (IFN) response. These results suggest that lucidone is a promising candidate for drug development.
Realizing omnidirectional light harvesting by employing hierarchical architecture for dye sensitized solar cells
(2016)
Hsieh, Ming-Yang
;
Lai, Fang-I
;
Chen, Wei-Chun
;
Hsieh, Min-Chi
;
Hu, Hsiang-Yi
To improve the omnidirectional light-harvesting in dye-sensitized solar cells (DSSCs), here we present a dandelion-like structure composed of ZnO hemispherical shells and nanorods. Uniformly distributed hemispherical shells effectively suppress the reflection over the broadband region at incident angles up to 60 degrees, greatly improving the optical absorption of the DSSCs. In addition, modulating the length of the ZnO nanorods controls the omnidirectional characteristics of DSSCs. This phenomenon is attributed to the degree of periodicity of the ZnO dandelion-like structures. Cells with shorter rods exhibit a high degree of periodicity, thus the conversion efficiencies of the cells show specific angle-independent features. On the other hand, the cells with longer lengths reveal angle-dependent photovoltaic performance. Along with the simulation, the cells with dandelion-like ZnO structures can couple incident photons efficiently to achieve excellent broadband and omnidirectional light-harvesting performances experimentally, and the DSSCs enhanced the conversion efficiency by 48% at large incident angles. All these findings not only provide further insight into the light-trapping mechanism in these complex three-dimensional nanostructures but also offer efficient omnidirectional and broadband nanostructured photovoltaics for advanced applications.
Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy
(2014-03)
Wu, Yue-Han
;
Wong, Yuen-Yee
;
Chen, Wei-Chun
;
Tsai, Dung-Sheng
;
Peng, Chun-Yen
Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality similar to 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
(2017-01)
Liu, Yu-Heng
;
Jiang, Cheng-Min
;
Chen, Wei-Chun
;
Wang, Tahui
;
Tsai, Wen-Jer
We investigated electric field-induced trapped electron lateralmigration in a SONOS flash cell. The threshold voltage shift (Delta V-t) andgate-induceddrain leakage(GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used tomonitor trapped charge lateralmigration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
(2017-01)
Liu, Yu-Heng
;
Jiang, Cheng-Min
;
Chen, Wei-Chun
;
Wang, Tahui
;
Tsai, Wen-Jer
We investigated electric field-induced trapped electron lateralmigration in a SONOS flash cell. The threshold voltage shift (Delta V-t) andgate-induceddrain leakage(GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used tomonitor trapped charge lateralmigration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.

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