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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Design on power-rail ESD clamp circuit for 3.3-V I/O interface by using only 1-V/2.5-V low-voltage devices in a 130-nm CMOS process
    (2006-10-01)
    Ker, Ming-Dou
    ;
    Chen, Wen-Yi
    ;
    Hsu, Kuo-Chun
    ;
    電機學院
    ;
    College of Electrical and Computer Engineering
    A new power-rail electrostatic discharge (ESD) clamp circuit for application in 3.3-V mixed-voltage input-output (I/O) interface is proposed and verified in a 130-nm 1-V/2.5-V CMOS process. The devices in this power-rail ESD clamp circuit are all 1-V or 2.5-V low-voltage nMOS/pMOS devices, which are specially designed without suffering the gate-oxide reliability issue under 3.3-V I/O interface applications. A special ESD detection circuit realized with the low-voltage devices is designed and added in the power-rail ESD clamp circuit to improve ESD robustness of ESD clamp devices by substrate-triggered technique. The experimental results verified in a 130-nm CMOS process have proven the excellent effectiveness of this new proposed power-rail ESD clamp circuit.