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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, Yi-ChunSubject: search.filters.subject.BiFeO3

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    Exploring Topological Defects in Epitaxial BiFeO3 Thin Films
    (2011-02-01)
    Vasudevan, Rama K.
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    Chen, Yi-Chun
    ;
    Tai, Hsiang-Hua
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    Balke, Nina
    ;
    Wu, Pingping
    Using a combination of piezoresponse force microscopy (PFM) and phase-field modeling, we demonstrate ubiquitous formation of center-type and possible ferroelectric closure domain arrangements during polarization switching near the ferroelastic domain walls in (100) oriented rhombohedral BiFeO3. The formation of these topological defects is determined from the vertical and lateral PFM data and confirmed from the reversible changes in surface topography. These observations provide insight into the mechanisms of tip-induced ferroelastic domain control and suggest that formation of topological defect states under the action of local defect- and tip-induced fields is much more common than previously believed.
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    Tailoring Magnetoelectric Coupling in BiFeO3/La0.7Sr0.3MnO3 Heterostructure through the Interface Engineering
    (2019-03-15)
    Yi, Di
    ;
    Yu, Pu
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    Chen, Yi-Chun
    ;
    Lee, Hsin-Hua
    ;
    He, Qing
    Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO3 (BFO) and La0.7Sr0.3MnO3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.