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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Cheng, C. F.Subject: search.filters.subject.program

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    A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention
    (2007-10-01)
    Yang, H. J.
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    Chin, Albert
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    Chen, W. J.
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    Cheng, C. F.
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    Huang, W. L.
    We describe a programmable-erasable MIS capacitor with a single high-kappa Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of similar to 6.6 fF/mu m(2), low program and erase voltages of +5 and -5 V, respectively, and a large Delta V-fb memory window of 1.5 V. In addition, the 25 degrees C data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.
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    Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositions
    (2008-06-01)
    Yang, H. J.
    ;
    Cheng, C. F.
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    Chen, W. B.
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    Lin, S. H.
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    Yeh, F. S.
    We have studied the nitrogen composition dependence of the characteristics of TaN/HfLaON/Hf(1-x-y)N(x)O(y)/ SiO(2)/Si MONOS memory devices. By increasing the N composition in the Hf(1-x-y)N(x)O(y) trapping layer, both the memory window And high-temperature retention improved. The Hf(0.3)N(0.2)O(0.5) MONOS device displayed good characteristics in terms of its +/-9-V program/erase (P/E) voltage, 100-mu s P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85 degrees C or 1.5 V at 125 degrees C.