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Now showing 1 - 10 of 72

On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate Stack
(2018-10-27)
Lin, M. H.
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Fan, C. C.
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Hsu, H. H.
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Liu, C.
;
Chen, K. M.
We investigated a short-channel ferroelectric FinFET using a ferroelectric HfZrO thin film as gate dielectrics, and scaled down the channel length to 60 nm to study the short-channel effect and the ferroelectricity. The HfZrO FinFETs exhibited improved short-channel performance including subthreshold swing improvement and reduced drain-induced barrier lowering effect. By using pulsed I-V measurement method, we confirmed that the thickness tradeoff between HfZrO ferroelectric layer and buffered layer are critical to alleviate the influence of interface traps and simultaneously obtain the ferroelectricity in HfZrO FinFET devices with the consideration of sidewall traps. Interface traps may cause unwanted off-state leakage current and mismatching negative capacitance. Here, we demonstrated that the ferroelectric behavior can be achieved by simultaneously increasing HfZrO thickness to obtain the optimized polarization and adopt appropriate buffered layer to screen the traps effect under ferroelectric domain switching. (C) 2018 The Electrochemical Society.
Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash Memory
(2018-01-01)
Lin, T. W.
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Ku, S. H.
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Cheng, C. H.
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Lee, C. W.
;
Ijen-Huang
Vt instability caused by random telegraph noise (RTN) in floating gate flash memories beyond 20nm is studied comprehensively. Experiments reveal that the RTN would cause Vt distribution with a kinked tail which re-distributes to a "Gaussian-like" shape rapidly and was measured by the self established Budget Product Tester (BPT). A Multi-Times Verify (MTV) algorithm to mitigate the statistical tail, thus enlarging operation window is also exhibited by BPT. In further, a probability model to portray the compact Vt distribution under MTV is proposed. Finally, the impact of MTV on lowering the requirement of Error-correcting code (ECC) bit is also demonstrated.
Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash Memory
(2018-01-01)
Ku, S. H.
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Lin, T. W.
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Cheng, C. H.
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Lee, C. W.
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Chen, Ti-Wen
Endurance of floating gate flash memories at 19nm node and beyond is studied comprehensively. Experiments reveal that the random telegraph noise (RTN) would degrade the read margin with a tail, which quickly reshapes into a symmetric Gaussian form in a lightly-stressed state. After heavy stress, the lower part of tail would spread further while the upper part keeps roughly overlapped with that during fresh. This unique behavior, which was firstly measured by the self-established Budget Product Tester (BPT), can be explained by stress-induced hole trap creation. To investigate the impact of RTN on operation window, a novel algorithm of Multi-Times-Verify accompanied with the optimal Read-Retry (MTVR2) is proposed and validated by BPT. The advantage of MTVR2 to reduce the requirement of Error-Correcting Code (ECC) bit is demonstrated. Finally, the improvement of bit error rate (BER) in TLC operation with MTVR(2 )is also evaluated.
A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO3 rf Capacitor
(2010-01-01)
Cheng, C. H.
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Huang, C. C.
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Hsu, H. H.
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Chen, P. C.
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Chiang, K. C.
In this article, we investigate the frequency-dependent voltage nonlinearity effect of high-kappa Ni/SrTiO3/TaN and TaN/SrTiO3/TaN radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical and thermal stresses. The experimental results demonstrated that the MIM-related capacitance properties, dependence of voltage and frequency, are not only affected by intrinsic dielectric properties but also shared by extrinsic effect, which possibly originated from the oxygen vacancies or electrode polarization. The high work-function Ni electrode can prevent the frequency-dependent voltage coefficient of capacitance characteristics from deterioration under the high temperature or continued voltage-stressing environments. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491490] All rights reserved.
High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO3 Gate Dielectrics
(2010-12-01)
Chen, W. B.
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Cheng, C. H.
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Chin, Albert
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光電學院
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電子工程學系及電子研究所
This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm(2)/V . s at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 x 10(-10) A/mu m OFF-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 degrees C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-kappa LaAlO3 dielectric without using an interfacial layer. Using a different high-kappa HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.
Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents
(2011-01-31)
Cheng, C. H.
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Chin, Albert
;
Yeh, F. S.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiOx to form the cost-effective Ni/GeOx/SrTiOx/TaN resistive random access memory, ultralow set power of small 1 mu W (0.9 mu A at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 10(6) cycling endurance are realized. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549689]
Ultralow Switching Energy Ni/GeOx/HfON/TaN RRAM
(2011-03-01)
Cheng, C. H.
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Chin, Albert
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Yeh, F. S.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Using stacked covalent-bond-dielectric GeOx on metal-oxynitrideHfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 mu W (0.1 mu A at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10(6) cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.
High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al2O3-Doped SrTiO3 MIM Capacitors
(2010-01-01)
Huang, C. C.
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Cheng, C. H.
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Lin, C. W.
;
Chang, L. M.
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電子工程學系及電子研究所
In this paper, the impact of Al2O3 incorporation on the electrical characteristics of the SrTiO3 (STO) metal-insulator-insulator (MIM) capacitor was studied. The Al2O3-doped STO (STO: Al2O3 = 3:1) MIM provides a high capacitance density (14.6 fF/mu m(2)) and a very low leakage current density (9.2 x 10(-9) A/cm(2) at -1 V) at the same time. The significant enhancement of the conduction band offset and bandgap due to Al2O3 incorporation reduces leakage current largely while maintaining the favorable properties of STO, such as a large high-kappa value, a small temperature coefficient of capacitance, and paraelectricity (no fatigue or aging problem) in the operating temperature range of devices. Meanwhile, we also made a comparison among pure STO, Al2O3-doped STO, and HfO2-doped STO MIM capacitors. Results revealed that STO MIM and HfO2-doped STO MIM capacitors both show higher capacitance densities, while the leakage current of the Al2O3-doped STO MIM is much lower than those of both the STO MIM and HfO2-doped STO MIM capacitors, which meets the strict requirement of the International Technology Roadmap for Semiconductors 2018. Therefore, the excellent result suggests that the Al2O3-doped STO film is a potential candidate material for dynamic random access memory and radio-frequency applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3368671] All rights reserved.
Bipolar conductivity in amorphous HfO2
(2011-08-15)
Islamov, D. R.
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Gritsenko, V. A.
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Cheng, C. H.
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Chin, A.
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交大名義發表
This study calculates the contribution of electrons and holes to HfO2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]
Higher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors
(2010-06-01)
Cheng, C. H.
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Hsu, H. H.
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Chen, P. C.
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Liou, B. H.
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Chin, Albert
In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.

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