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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Cheng, Chun-HuSubject: search.filters.subject.HfZrO

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Now showing 1 - 4 of 4
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    Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatments
    (2019-01-01)
    Lee, You-Ting
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    Chen, Hsuan-Han
    ;
    Tung, Yi-Chun
    ;
    Shih, Bing-Yang
    ;
    Hsiung, Szu-Yen
    In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.
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    Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode
    (2017-03-01)
    Chiu, Yu-Chien
    ;
    Cheng, Chun-Hu
    ;
    Chang, Chun-Yen
    ;
    Tang, Ying-Tsan
    ;
    Chen, Min-Cheng
    In this work, we report a ferroelectric memory with strainedgate engineering. The memory window of the high strain case was improved by similar to 71% at the same ferroelectric thickness. The orthorhombic phase transition (from ferroelectric to antiferroelectric transition) plays a key role in realizing negative capacitance effect at high gate electric field. Based on a reliable first principles calculation, we clarify that the gate strain accelerates the phase transformation from metastable monoclinic to orthorhombic and thus largely enhances the ferroelectric polarization without increasing dielectric thickness. This ferroelectric strain technology shows the potential for emerging device application.
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    Experimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memory
    (2017-10-01)
    Cheng, Chun-Hu
    ;
    Chiu, Yu-Chien
    ;
    Liou, Guan-Lin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    In this work, we investigated the negative capacitance behavior of novel ferroelectric versatile memory with low-voltage-driven and fast ferroelectric switching. The combined storage mechanism strengthened the stability of ferroelectric polarization by interface aligned dipoles. The simulation results of first principle calculation indicated that the monoclinic-like orthorhombic phase of ferroelectric hafnium oxide facilitated the occurrence of S-shaped negative capacitance behavior. Furthermore, the control of phase transition may affect ferroelectric property and negative capacitance effect during program and erase states.
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    On the Variability of Threshold Voltage Window in Gate-Injection Versatile Memories with Sub-60mV/dec Subthreshold Swing and 10(12)-Cycling Endurance
    (2016)
    Chiu, Yu-Chien
    ;
    Chang, Chun-Yen
    ;
    Yen, Shiang-Shiou
    ;
    Fan, Chia-Chi
    ;
    Hsu, Hsiao-Hsuan
    Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Delta V-T) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of V-T and SS during 10(12) cycling endurance.