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Author: search.filters.author.Cheng, HCSubject: search.filters.subject.amorphous silicon

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Now showing 1 - 4 of 4
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    Item type:Item,
    The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states
    (1997-10-01)
    Cheng, HC
    ;
    Tsai, JW
    ;
    Huang, CY
    ;
    Luo, FC
    ;
    Tuan, HC
    The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses; the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFTs with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.
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    Item type:Item,
    Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors
    (1996-02-01)
    Liang, CW
    ;
    Luo, TC
    ;
    Feng, MS
    ;
    Cheng, HC
    ;
    Su, D
    AL(2)O(3)/SINx double-layered dielectric films suitable for large-size amorphous silicon thin film transistor liquid crystal displays (a-Si:H TFT LCD) have been prepared by anodization and plasma enhanced chemical vapor deposition (PECVD). Al2O3 films were formed at various pH values and volume ratio of water (H2O%) in the electrolyte. The optimal quality of Al2O3 film was achieved at pH = 6 and H2O% = 30. These high-quality Al2O3 films have denser structure, lower etching rate (90 Angstrom min(-1)) and smooth surface morphology after etching. The capacitors made of the anodization show a breakdown field as high as 7.8 MV cm(-1) and a low leakage current density of 10 nA cm(-2) at a dielectric field of 3 MV cm(-1). Furthermore, a-Si:H TFTs with Al gate and different gate dielectrics (Al2O3/SINx and SiNx) were also fabricated and evaluated. The TFTs with Al2O3/SiNx double-layered gate dielectric provide better performances, such as the smaller threshold voltage (1.76 V), improved subthreshold swing (1.0 V dec(-1)), and lower off-current (3.8 PA) than those of the device with single SiNx, film.
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    Item type:Item,
    Excellent emission characteristics of tunneling oxides formed using ultrathin silicon films for flash memory devices
    (1996-06-01)
    Wang, PW
    ;
    Ku, TK
    ;
    Su, HP
    ;
    Hong, G
    ;
    Cheng, HC
    A novel technique using oxidized ultrathin rugged polysilicon films on silicon substrates has been appied to significantly improve the tunneling efficiency of thin oxides. As compared with oxidized amorphous silicon films, these rugged polysilicon films can achieve a higher emission current. High-resolution transmission electron microscopy (HRTEM) was used to observe the atomic-scale microtips at the SiO2/Si and polysilicon/SiO2 interfaces. According to the extracted geometry parameters of the microtips, a two-dimensional numerical simulator based on the finite difference method using the curved emitting surface of microtips can well explain the remarkable current asymmetry of the dielectrics. This suggests that the oxidized rugged polysilicon films can form higher microtips and smaller tip angles, resulting in better emission characteristics that will enable potential applications to future 5-V-only nonvolatile memories.
  • Thumbnail Image
    Item type:Item,
    The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states
    (1997-10-01)
    Cheng, HC
    ;
    Tsai, JW
    ;
    Huang, CY
    ;
    Luo, FC
    ;
    Tuan, HC
    The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses; the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFTs with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.