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Author: search.filters.author.Cheng, HCSubject: search.filters.subject.excimer laser annealing

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Now showing 1 - 4 of 4
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    Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing
    (2002-08-01)
    Tseng, CH
    ;
    Lin, CW
    ;
    Teng, TH
    ;
    Chang, TK
    ;
    Cheng, HC
    The KrF excimer laser annealing of phosphorous implanted polycrystalline silicon (poly-Si) films had been investigated completely. Resistors were fabricated to measure sheet resistance of poly-Si film. The interference effect, heat absorption of capping oxide as well as transformation of poly-Si grain size during laser annealing were reported. Depending on the carrier concentrations, poly-Si exhibits different sheet resistance behavior when the excimer laser fluence is higher than the full-melt threshold fluence. The sheet resistance of poly-Si film has an abnormal increase from 5 x 10(4) to 4 x 10(6) Q/square when the excimer laser energy is higher than full-melt threshold energy. (C) 2002 Elsevier Science Ltd. All rights reserved.
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    A novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallization
    (2003-04-01)
    Chang, TK
    ;
    Chu, FT
    ;
    Lin, CW
    ;
    Tseng, CH
    ;
    Cheng, HC
    In this letter, a novel process for fabricating p-channel poly-Si1-xGex thin-film transistors (TFTs) with high-hole mobility was demonstrated. Germanium (Ge) atoms were incorporated into poly-Si by excimer laser irradiation of a-Si1-xGex/poly-Si double layer. For small size TFTs, especially when channel width/length (W/L) was less than 2 mum/2 mum, the hole mobility of poly-Si1-xGex TFTs was superior to that of poly-Si TFTs. It was inferred that the degree of mobility enhancement by Ge incorporation was beyond that of mobility degradation by defect trap generation when TFT size was shrunk to 2 mum/2 mum. The poly-Si0.91Ge0.09 TFT exhibited a high-hole mobility of 112 cm(2)/V-s, while the hole mobility of the poly-Si counterpart was 73 cm(2)/V-s.
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    The effects of post excimer laser annealing on (Ba,Sr)TiO3 thin films at low substrate temperatures
    (2003-04-01)
    Shye, DC
    ;
    Chiou, BS
    ;
    Hwang, CC
    ;
    Jaing, CC
    ;
    Hsu, HW
    The amorphous (Ba,Sr)TiO3 (alpha-BST) films sputtered onto the Pt/TiN/Ti/Si substrates are greatly improved using the excimer laser annealing (ELA) technique of wavelength 248 nm at low substrate temperature 300degreesC. The dielectric constant of the alpha-BST film is remarkably enhanced from 80 to over 250 after ELA treatment. The heat conduction analysis indicates that a very shallow light absorption depth of the wavelength 248 nm for the BST film behaves an excellent thermal property, which doesn't,damage the underlayer films during ELA treatment. Besides, the leakage current of ELA-BST films is strongly influenced by the laser energy fluence (LEF). The detailed mechanisms of the crystallinity and the electric properties am systematically studied in this report.
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    Characteristics of low-temperature-prepared (Ba, Sr)TiO3 films post treated by novel excimer laser annealing
    (2002)
    Shye, DC
    ;
    Chiou, BS
    ;
    Hwang, CC
    ;
    Chen, JS
    ;
    Su, IW
    Thin (Ba0.5Sr0.5)TiO3 (BST) films were sputtered on Pt[FiN/Ti/Si multilayer substrates at very low temperature (150degrees C). A novel process, using wavelength 248-nm KrF excimer laser annealing (ELA), has been undertaken to implement barium strontium titanate (BST) films at a low process temperature of 300degrees C. The crystallinity and dielectric constant are greatly improved after ELA treatment. In this work, the variation of texture was investigated. Besides, the escaped oxygen atoms from BST films were detected in-situ using a residual gas analyzer (RGA) during ELA process. Thus, the degradation of upper surface is strongly influenced by the laser energy fluence for an ELA-BST film.