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Author: search.filters.author.Cheng, Hui-WenSubject: search.filters.subject.3D device simulation

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    Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-kappa/Metal Gate Bulk FinFETs
    (2011)
    Cheng, Hui-Wen
    ;
    Chiu, Yung-Yueh
    ;
    Li, Yiming
    ;
    電機學院
    ;
    電子工程學系及電子研究所
    In this work, the work function fluctuation (WKF) induced variability in 16-nm-gate planar MOSFET and bulk FinFET is for the first time explored and compared. Based upon an experimentally calibrated 3D device simulation, the newly developed localized WKF (LWKF) simulation technique enables us to estimate the threshold voltage and DC baseband fluctuations of devices which accounts for the random grain\'s number and position effects simultaneously. The results show that the random work function, resulting from local nanosized metal grains in bulk FinFET, induced relatively small threshold voltage (V-th) fluctuation (about 2.5 times lower), compared with the result of planar device.
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    Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-kappa/Metal Gate Bulk and SOI FinFETs
    (2012)
    Su, Hsin-Wen
    ;
    Chen, Yu-Yu
    ;
    Chen, Chieh-Yang
    ;
    Cheng, Hui-Wen
    ;
    Chang, Han-Tung
    This work studies the metal gate\'s work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fm-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method of localized work function fluctuation simulation enables us to estimate local fluctuations including the nanosized grain\'s random effects of FinFET with TiN/HfO2 gate stacks. The result of this study shows characteristic fluctuation strongly depends upon the size of localized nanosized metal grains. The shape of grains does have marginal influence on device\'s variability.
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    Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-kappa/metal gate MOSFETs in the presence of random discrete dopants and random interface traps
    (2012-11-01)
    Li, Yiming
    ;
    Cheng, Hui-Wen
    ;
    資訊工程學系
    ;
    Department of Computer Science
    We estimate the effects of random discrete dopants (RDs) and random interface traps (ITs) on physical and electrical characteristic fluctuations of 16-nm-gate high-kappa/metal gate (HKMG) metal-oxide-semiconductor field effect transistors (MOSFETs). Two-dimensional (2D) random ITs at the hafnium oxide (HfO2)/silicon interface and 3D RDs inside the silicon channel of the 16-nm-gate HKMG MOSFETs are simultaneously incorporated into an experimentally validated 3D device simulation to quantify the RDs-and-ITs-fluctuated characteristics. The random effect of the combined RDs and ITs induces rather different fluctuation in the threshold voltage, the on-/off-state current, and the gate capacitance in the 16-nm-gate HKMG MOSFETs. The surface potential, DC and AC characteristic fluctuations are affected to different extents by the random combinatorial RDs and ITs. Nonlinearly correlated RDs and ITs violate the statistical assumption of independent identical distributions between the RDs- and ITs-induced random variables. Consequently, for the studied 16-nm-gate HKMG N-MOSFETs, the threshold voltage fluctuation induced by the combined RDs and ITs is 11% less than their statistical sum due to local interaction of surface potentials resulting from the RDs and ITs simultaneously. Similarly, it is about 8.9% for the P-MOSFET devices. Depending upon random position and number of the combined RDs and ITs, overestimation or underestimation between the statistical sum of variances and the 3D device simulation is also observed for the drain current and the gate capacitance. (c) 2012 Elsevier Ltd. All rights reserved.