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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Cheng, Hui-WenSubject: search.filters.subject.Fluctuation

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    Field Emission Stability of Anodic Aluminum Oxide Carbon Nanotube Field Emitter in the Triode Structure
    (2009-05-01)
    Li, Yiming
    ;
    Cheng, Hui-Wen
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    In this work, fabricated field emission (FE) triode arrays with the anodic aluminum oxide (AAO) template carbon nanotube (CNTs) as the field emitters are numerically analyzed. To obtain physically sound self-consistent solution, a set of Maxwell's equations coupling with Lorentz equation are solved simultaneously using a finite difference time domain particle-in-cell method. The FE current is then computed with the Fowler-Nordheim equation. To validate the simulation model, we firstly calibrate the collected electron current density between the measured AAO-CNTs and calculated result. The FE current is dominated by, such as density, height, diameter, and tilt angle of CNTs, and applied bias, respectively. A high density of CNTs will result in strong screening effect among adjacent CNTs and reduce the magnitude of electric field. Consequently, it significantly affects the emitted and collected electron current densities. However, the structure with much higher density of CNTs obviously emits more stable current than that of a low density of CNTs. There is an optimal selling on the height and diameter of the CNTs within the explored structure which exhibits the highest current density. When we vary the density of CNTs, the structure with high density (say the number of CNTs is greater than 30) shows the most stable and smallest fluctuation on the current density against the randomly generated samples of the height and tilt angle of CNTs.
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    Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET
    (2011-01-01)
    Li, Yiming
    ;
    Cheng, Hui-Wen
    ;
    Han, Ming-Hung
    ;
    傳播研究所
    ;
    電機工程學系
    Impact of the discrete dopants on device performance is crucial in determining the behavior of nanoscale semiconductor devices Atomistic quantum mechanical device simulation for studying the effect of discrete dopants on device s physical quantities is urgent This work explores the physics of discrete-dopant-induced characteristic fluctuations in 16-nm fin-typed field effect transistor (FinFET) devices Discrete dopants are statistically positioned in the three-dimensional channel region to examine associated carrier's characteristic concurrently capturing "dopant concentration variation" and "dopant position fluctuation" An experimentally validated quantum hydrodynamic device simulation was conducted to investigate the potential profile and threshold voltage fluctuations of the 16-nm FinFET Results of this study provide further insight into the problem of fluctuation and the mechanism of immunity against fluctuation in 16-nm devices (C) 2010 Elsevier BV All rights reserved
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    Reduction of Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS Circuit
    (2008)
    Li, Yiming
    ;
    Hwang, Chih-Hong
    ;
    Yeh, Ta-Ching
    ;
    Huang, Hsuan-Ming
    ;
    Li, Tien-Yeh
    As the dimension of semiconductor device shrunk into nanoscale, characteristic fluctuation is more pronounced, and become crucial for circuit design. Diverse approaches have been reported to investigate and suppress the random-dopant-induced fluctuations in devices. However, attention is seldom drawn to the existence of high-frequency characteristic fluctuations of active device. In this paper, intrinsic high-frequency characteristic fluctuations of the nanoscale MOSFET circuit induced by random dopants are intensively explored using an experimentally validated simulation methodology, where fluctuation suppression technique is further examined. The circuit gain, the 3db bandwidth and the unity-gain bandwidth of the tested circuit are estimated concurrently capturing the discrete-dopant-number-and discrete-dopant-position-induced fluctuations. This study provides an insight into discrete-dopant-induced intrinsic high-frequency characteristic fluctuations and examines the potential fluctuation suppression technique for nanoscale transistor circuit.