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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Cheng, Hui-WenSubject: search.filters.subject.Random dopant

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Now showing 1 - 4 of 4
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    Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs
    (2011-07-01)
    Li, Yiming
    ;
    Cheng, Hui-Wen
    ;
    Chiu, Yung-Yueh
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    傳播研究所
    ;
    電機工程學系
    In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO(2) film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/ off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated. (C) 2011 Elsevier B.V. All rights reserved.
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    Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET
    (2011-01-01)
    Li, Yiming
    ;
    Cheng, Hui-Wen
    ;
    Han, Ming-Hung
    ;
    傳播研究所
    ;
    電機工程學系
    Impact of the discrete dopants on device performance is crucial in determining the behavior of nanoscale semiconductor devices Atomistic quantum mechanical device simulation for studying the effect of discrete dopants on device s physical quantities is urgent This work explores the physics of discrete-dopant-induced characteristic fluctuations in 16-nm fin-typed field effect transistor (FinFET) devices Discrete dopants are statistically positioned in the three-dimensional channel region to examine associated carrier's characteristic concurrently capturing "dopant concentration variation" and "dopant position fluctuation" An experimentally validated quantum hydrodynamic device simulation was conducted to investigate the potential profile and threshold voltage fluctuations of the 16-nm FinFET Results of this study provide further insight into the problem of fluctuation and the mechanism of immunity against fluctuation in 16-nm devices (C) 2010 Elsevier BV All rights reserved
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    Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices
    (2009-03-01)
    Li, Yiming
    ;
    Hwang, Chih-Hong
    ;
    Cheng, Hui-Wen
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    Impact of the intrinsic fluctuations on device characteristics, such as the threshold voltage (V(th)) fluctuation is crucial in determining the behavior of nanoscale semiconductor devices. In this paper, the dependency of process-variation and random-dopant-induced V(th) fluctuation on the gate oxide thickness scaling in 16 nm metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated. Fluctuations of the threshold voltage for the studied planar MOSFETs with equivalent oxide thicknesses (EOT) from 1.2 nm to 0.2 nm (e.g., SiO(2) for the 1.2 and 0.8 nm EOTs, Al(2)O(3) for the 0.4 nm EOT and HfO(2) for the 0.2 nm EOT) are then for the first time compared with the results of 16 nm bulk fin-typed filed effect transistors (FinFETs), which is one of the promising candidates for next generation semiconductor devices. An experimentally validated simulation is conducted to investigate the fluctuation property, Result of this study confirms the suppression of V(th) fluctuations with the gate oxide thickness scaling (using high-kappa dielectric). It is found that the immunity of the planar MOSFET against fluctuation suffers from nature of structural limitations. Bulk FinFETs alleviate the challenges of device's scaling and have potential in the nanoelectronics application. (C) 2008 Elsevier B.V. All rights reserved.
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    Reduction of Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS Circuit
    (2008)
    Li, Yiming
    ;
    Hwang, Chih-Hong
    ;
    Yeh, Ta-Ching
    ;
    Huang, Hsuan-Ming
    ;
    Li, Tien-Yeh
    As the dimension of semiconductor device shrunk into nanoscale, characteristic fluctuation is more pronounced, and become crucial for circuit design. Diverse approaches have been reported to investigate and suppress the random-dopant-induced fluctuations in devices. However, attention is seldom drawn to the existence of high-frequency characteristic fluctuations of active device. In this paper, intrinsic high-frequency characteristic fluctuations of the nanoscale MOSFET circuit induced by random dopants are intensively explored using an experimentally validated simulation methodology, where fluctuation suppression technique is further examined. The circuit gain, the 3db bandwidth and the unity-gain bandwidth of the tested circuit are estimated concurrently capturing the discrete-dopant-number-and discrete-dopant-position-induced fluctuations. This study provides an insight into discrete-dopant-induced intrinsic high-frequency characteristic fluctuations and examines the potential fluctuation suppression technique for nanoscale transistor circuit.