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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Cheng, Hui-WenSubject: search.filters.subject.modeling and simulation

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Now showing 1 - 4 of 4
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    Statistical Simulation of Metal-Gate Work-function Fluctuation in High-kappa/Metal-Gate Devices
    (2010)
    Yu, Chia-Hui
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    Han, Ming-Hung
    ;
    Cheng, Hui-Wen
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    Su, Zhong-Cheng
    ;
    Li, Yiming
    In this work, we statistically examine the emerging high-kappa / metal gate work-function fluctuation (WKF) induced threshold voltage (V(th)) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly reduce the impact of Vth fluctuation owing to WKF. First, four kinds of gate material are examined and TiN possesses the smallest Vth fluctuation. For fabrication process, a fast deposition of metal at lower temperature prevents the metal grain not to grow to large size result in a smaller variation. In addition, an idea of modeling multilayer metal gate WKF is also presented and discussed, in which the first layer plays the most important role, compared with other layers, for the fluctuation suppression.
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    Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits
    (2009)
    Hwang, Chih-Hong
    ;
    Li, Tien-Yeh
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    Han, Ming-Hung
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    Lee, Kuo-Fu
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    Cheng, Hui-Wen
    This work for the first time estimates the influences of the intrinsic parameter fluctuations consisting of metal gate workfunction fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold voltage fluctuation; however, the WKF brings less impact on the gate capacitance due to the screening effect of the inversion layer. The fluctuation of timing characteristics depends on the threshold voltage fluctuation, and therefore is proportional to the trend of threshold voltage fluctuation. For an amplifier circuit, the high-frequency characteristics, the circuit gain, the 3dB bandwidth, the unity-gain bandwidth power, and the power-added efficiency, are explored consequently. Similar to the trend of the cutoff frequency, the PVE and RDF dominate both the device and circuits characteristic fluctuations due to the significant gate capacitance fluctuations and the WKF is less important at this simulation scenario. The extensive study assesses the fluctuations on circuit performance and reliability, which can in turn be used to optimize nanoscale MOSFET and circuits.
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    Effect of Process Variation on 15-nm-Gate Stacked Multichannel Surrounding-Gate Field Effect Transistor
    (2009)
    Han, Ming-Hung
    ;
    Cheng, Hui-Wen
    ;
    Hwang, Chih-Hong
    ;
    Li, Yiming
    ;
    傳播研究所
    Stacked multichannel transistor architectures were proposed recently which possess very attractive electrical characteristics on low leakage current and high driving current per layout area. However, due to complex manufacturing process, the process variation effect is inevitable and whose impact is unknown. Therefore, this study investigates the impact of process variation on 15-nm-gate stacked multichannel transistors consisting of the gate length deviation, channel position variation, quadruple-shaped channel structure and elliptic gate oxide. Our preliminary result shows that the stacked multichannel devices have good immunity to the gate length deviation and channel spacing variations; however, they are sensitive to the gate coverage ratio and gate oxide thickness variations. This study provides an insight into the device characteristic variations, which may benefit the development of nanoscale stacked multichannel transistors and circuits.
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    Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET Devices
    (2008)
    Hwang, Chih-Hong
    ;
    Cheng, Hui-Wen
    ;
    Yeh, Ta-Ching
    ;
    Li, Tien-Yeh
    ;
    Huang, Hsuan-Ming
    Intrinsic fluctuations on device characteristics, such as the threshold voltage (V(th)) fluctuation is crucial in determining the behavior of nanoscale semiconductor devices. In this paper, the dependency of process-variation and random-dopant-induced Vth fluctuation on the gate oxide thickness scaling in 16 nm metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated. Fluctuations of the threshold voltage for the studied planar MOSFETs with equivalent oxide thicknesses (EOT) from 1.2 nm to 0.2 nm (e.g., SiO(2) for the 1.2 and 0.8 nm EOTs, Al(2)O(3) for the 0.4 nm EOT and HfO(2) for the 0.2 nm EOT) are then for the first time compared with the results of 16nm bulk fin-typed filed effect transistors (FinFETs), which is one of the promising candidates for next generation semiconductor devices. An experimentally validated simulation is conducted to investigate the fluctuation property. Result of this study confirms the suppression of Vth fluctuations with the gate oxide thickness scaling (using high-kappa dielectric). It's found that the immunity of the planar MOSFET against fluctuation suffers from nature of structural limitations. Bulk FinFETs alleviate the challenges of device's scaling and have potential in the nanoelectronics application.