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Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers
(2019-03-14)
Li, Zong-Lin
;
Lin, Shen-Chieh
;
Lin, Gray
;
Cheng, Hui-Wen
;
Sun, Kien-Wen
We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.
Design of Miniaturized Antenna and Power Harvester Circuit on the Enucleated Porcine Eyes
(2014-01-01)
Cheng, Hui-Wen
;
Yu, Tsung-Chi
;
Huang, Hong-Yi
;
Ting, Ssu-Han
;
Huang, Tzuen-Hsi
This letter describes a prototype of a miniaturized rectifying antenna (rectenna) design for the wireless powering of an ocular device. In contrast to the conventional on-lens loop antenna, this letter presents a loop antenna with stepped structures for optimal impedance to the rectifier. The return loss of the antenna less than -15 dB at 3 GHz is accomplished in a contact lens with a diameter ranging from 10 to 15 mm. Additionally, the radio frequency (RF) rectifier and voltage-boosting network (VBN) are optimized to enhance the power conversion efficiency (PCE) by using the voltage boosting technique. Experimental results indicate that the optimal rectifier, which is fabricated with the TSMC 0.18-mu m process, produces a dc output voltage of 2.94 V and a conversion efficiency of 31% across a resistive 3.5 k Omega load with an input power of +9 dBm. Moreover, the rectenna under the experiment with an enucleated porcine eye can be powered wirelessly with a transmitting device at a distance of 4 cm. The output power is 2.01 mW with a transmitting power of +32 dBm for the wireless ocular physiological monitoring (WOPM) system. Importantly, this letter demonstrates the feasibility of an optimal miniaturized on-lens rectenna design, capable of overcoming the RF power attenuation on the ocular tissue to increase the delivering distance and reduce the transmitting power.
PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE
(2019-01-02)
Cheng, Hui-Wen
;
Lin, Shen-Chieh
;
Li, Zong-Lin
;
Sun, Kien-Wen
;
Lee, Chien-Ping
This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In0.35Ga0.65As0.095Sb0.905 in terms of growth parameters (V/III ratio, Sb-2/As-2 ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al0.85Ga0.15As0.072Sb0.928 (sample A) and Al0.5Ga0.5As0.043Sb0.957 (sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of AlxGa1-xAsySb1-y in terms of lasing performance.
Define high quality Type-I InGaAsSb/AlGaAsSb QW laser fabrication process with high-resolution x-ray diffraction
(2018-01-01)
Cheng, Hui-Wen
;
Lin, Chien-Hung
;
Lee, Chien-Ping
;
電機學院
;
電子工程學系及電子研究所
Active InGaAsSb/AlGaAsSb type-I quantum well (QW) compositions acceptable for pseudomorphic growth on GaSb substrates restrict the optical range to below 4 mu m. Increasing the In concentration in active region and growing lattice-matched barrier/cladding layers will reach higher emission wavelength. We need to overcome several issues during fabrication process to ensure this high quality epitaxial layer. In this paper, high-resolution x-ray diffraction (HRXRD) method is used to define optimal epitaxy parameters for stable type-I GaSb-based mid infrared laser structures.
Shape Effect of Surface-Enhanced Raman Scattering-Active-Substrate-Based Nanoparticles on Local Electric Field for Biochemical Sensing Application
(2017-02-01)
Lee, En-Tzu
;
Cheng, Hui-Wen
;
Yang, Jung-Yen
;
Li, Yiming
;
電機工程學系
The metal nanoparticles exhibit different degrees of localized surface plasmon resonance which depends on different type nano-sized structures. In this work, in experiment, Au/TiO2/Ti/Si SERS-active substrate with spherical shape nanoparticles is fabricated by using a hydrothermal treatment process and applied to detect Rhodamine 6G sample. Based on experimental observation, a threedimensional finite-difference time-domain simulation is utilized to explore the local field distributions. We examine the effect of surface roughness and shape of Au nanoparticles on the enhancement magnitude of local electric field of SERS-active substrates. Besides, different shapes of nanoparticles, nanocages and Au/Ag alloy nanoparticles are also modeled and discussed. The engineering findings of this study indicate that the substrate with roughened surface may exhibit large electric field enhancement; in particular, for the cubic shape of nanoparticles. The electric field enhancement of spherical and cubic nanoparticles could be further enlarged by Au/Ag alloy and Au nanocage structures. The results may benefit the design and fabrication of nanoparticles for various biochemical sensing applications.
Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-kappa/Metal Gate Bulk FinFETs
(2011)
Cheng, Hui-Wen
;
Chiu, Yung-Yueh
;
Li, Yiming
;
電機學院
;
電子工程學系及電子研究所
In this work, the work function fluctuation (WKF) induced variability in 16-nm-gate planar MOSFET and bulk FinFET is for the first time explored and compared. Based upon an experimentally calibrated 3D device simulation, the newly developed localized WKF (LWKF) simulation technique enables us to estimate the threshold voltage and DC baseband fluctuations of devices which accounts for the random grain\'s number and position effects simultaneously. The results show that the random work function, resulting from local nanosized metal grains in bulk FinFET, induced relatively small threshold voltage (V-th) fluctuation (about 2.5 times lower), compared with the result of planar device.
Simulation-Based Evolutionary Approach to Electrical Characteristic Optimization of p-i-n Silicon Thin-Film Solar Cells
(2011)
Lu, Zheng-Liang
;
Li, Yiming
;
Cheng, Hui-Wen
;
Lo, I-Hsiu
;
Wang, Chao-Chu
Solar cell is one of the most potent candicates for the next-generation energy technology due to its enviromental friendliness and renewable merit. Nowaday the major challenge is to lower fabrication cost while significantly enhancing the energy conversion energy. In this work, a simulator-based optimization for a-Si thin film solar cell with p-i-n structure is presented. Using genetic algorithm and electro-optical simulation, running on UOF platform, the optimal designs with respect to energy conversion efficiency, fill factor, short-circuited current density, and open-circuited voltage are obtained. Besides, the sensitivity analyses for different four cases are also conducted to investigate the degradation due to parameter variations. The best overall performance of a single layer a-Si thin film solar cell is achieved with energy conversion efficiency of 7.90% and an average efficiency is 7.35% if considers parameter variations.
On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps
(2012)
Li, Yiming
;
Su, Hsin-Wen
;
Chen, Chieh-Yang
;
Cheng, Hui-Wen
;
Chen, Yu-Yu
In this work, we statistically study characteristic fluctuation of 16-nm-gate high-kappa/metal gate (HKMG) MOSFETs by random-discrete-dopants (RDDs) inside silicon channel and random-interface-traps (RITs) at high-kappa/silicon interface. Randomly generated devices with three-dimensional (3D) RDDs inside device channel and 2D RITs at HfO2/Si interface are incorporated into quantum mechanically corrected 3D device simulation. Device characteristics, as influenced by different degrees of fluctuation, are discussed in relation to RITs near the source and drain ends, and RDDs near the device channel surface and silicon substrate. Characteristic fluctuations are affected to different extents by the random combinatorial RDDs and RITs. Nonlinearly correlated RDDs and RITs further violate the statistical assumption of independent identical distributions between the RDDs- and RITs-induced random variables. Consequently, for the studied 16-nm-gate HKMG MOSFETs, the threshold voltage fluctuation induced by the combined RDs and ITs is less than their statistical sum due to local interaction of surface potentials resulting from the RDDs and RITs simultaneously. In contrast to RDDs fluctuation, the screening effect of device\'s inversion layer cannot effectively screen potential\'s variation resulting from RITs; thus, devices still have noticeable gate capacitance characteristic fluctuation under high gate bias.
Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-kappa/Metal Gate Bulk and SOI FinFETs
(2012)
Su, Hsin-Wen
;
Chen, Yu-Yu
;
Chen, Chieh-Yang
;
Cheng, Hui-Wen
;
Chang, Han-Tung
This work studies the metal gate\'s work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fm-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method of localized work function fluctuation simulation enables us to estimate local fluctuations including the nanosized grain\'s random effects of FinFET with TiN/HfO2 gate stacks. The result of this study shows characteristic fluctuation strongly depends upon the size of localized nanosized metal grains. The shape of grains does have marginal influence on device\'s variability.
Single Molecule Take-and-Place Technique for Positioning a Membrane Protein on a Lipid Bilayer
(2015-09-10)
Liu, Tseng-Huang
;
Huang, Yun-Tzu
;
Cheng, Hui-Wen
;
Chen, Yen-Wei
;
Lee, Ching-Hung
Manipulating a single protein molecule on liposomes or planar lipid bilayers is a useful technique for studying membrane-bound proteins, receptors, or ion transporters and for delicate applications including biosensor chips, drug screening, and clinical diagnoses. However, several key breakthroughs are required for success through difficult techniques such as single protein take-and-place with reasonable spatiotemporal control. In this report, a novel method was established for placing a single transmembrane protein onto a patterned lipid bilayer. A surface-functionalized 1.8 nm gold nanoparticle was first engineered at the tip of an atomic force microscope. A single transmembrane protein, H+-translocating pyrophosphatase with six-histidine residues tag, was then picked up using such a microscopy tip where its nanoparticle was modified by nickel-nitrilotriacetic acid. Two-step fluorescence bleaching observation and quantum dot blinking analysis subsequently verified successful manipulation of a single functional protein on a lipid membrane in a predetermined manner. Furthermore, the enzymatic activity from the single H+-translocating pyrophosphatase was determined, demonstrating that membrane proteins retain their functions on the lipid bilayer through a single-molecule take-and-place technique. This innovative technique overcomes current limitations and provides a single biomolecule nanomanipulation system for versatile studies of membrane-bound proteins.

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