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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Cheng, Shun-JenSubject: search.filters.subject.III-V semiconductors

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    Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition
    (2009-02-09)
    Tsai, Wen-Che
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    Lin, Feng-Yi
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    Ke, Wen-Cheng
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    Lu, Shu-Kai
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    Cheng, Shun-Jen
    We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E(2) mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5x10(-3) is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.
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    Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
    (2009-06-22)
    Ling, Shih-Chun
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    Chao, Chu-Li
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    Chen, Jun-Rong
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    Liu, Po-Chun
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    Ko, Tsung-Shine
    The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on a nanorod GaN template. The investigation of x-ray diffraction showed that the strain in a-plane GaN grown on r-plane sapphire could be mitigated. The average threading dislocation density estimated by transmission electron microscopy was reduced from 3x10(10) to 3.5x10(8) cm(-2). From the temperature-dependent photoluminescence, the quantum efficiency of the a-plane GaN was enhanced by the nanorod epitaxial lateral overgrowth (NRELOG). These results demonstrated the opportunity of achieving a-plane GaN films with low dislocation density and high crystal quality via NRELOG.