<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chi, Jim Y.Has files: No

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
    (2007)
    Yang, Hung-Pin D.
    ;
    Liu, Jui-Nung
    ;
    Lai, Fang-, I
    ;
    Kuo, Hao-Chung
    ;
    Xuan, Rong
    An oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom DBR, quantum wells, and top DBR, with a holey structure for light extraction. The internally reflected spontaneous emission can be extracted out of the etched hole.
  • Thumbnail Image
    Item type:Item,
    Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
    (2008-05-01)
    Yang, Hung-Pin D.
    ;
    Hsu, I. -Chen
    ;
    Chang, Ya-Hsien
    ;
    Lai, Fang-I
    ;
    Yu, Hsin-Chieh
    We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.