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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chi, Jim Y.Subject: search.filters.subject.InGaAs

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    Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
    (2007-06-01)
    Yang, Hung-Pin D.
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    Chen, I-Liang
    ;
    Lee, Chen-Hong
    ;
    Chiou, Chih-Hong
    ;
    Lee, Tsin-Dong
    We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.
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    Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range
    (2008)
    Yang, Hung-Pin D.
    ;
    Hsu, I. -Chen
    ;
    Lai, Fang-I.
    ;
    Lin, Gray
    ;
    Hsiao, Ru-Shang
    We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.