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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chi, Jim Y.Subject: search.filters.subject.light-emitting diode (LED)

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    Item type:Item,
    Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
    (2007-05-01)
    Yang, Hung-Pin D.
    ;
    Liu, Jui-Nung
    ;
    Lai, Fang-I
    ;
    Kuo, Hao-Chung
    ;
    Chi, Jim Y.
    A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.
  • Thumbnail Image
    Item type:Item,
    Characteristics of multileaf holey light-emitting diodes for fiber-optic communications
    (2008-02-01)
    Yang, Hung-Pin D.
    ;
    Yeh, Zao-En
    ;
    Lai, Fang-I
    ;
    Kuo, Hao-Chung
    ;
    Chi, Jim Y.
    An oxide-confined multileaf holey light-emitting diode (LED) in the 780 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells QWs), and top DBR, with a multileaf holey structure within the p-ohmic contact ring for light extraction. The spontaneous emission from under the etched holes and internally reflected lights can be extracted and collimated out of the smaller etched leaf holes. High-resolution imaging studies indicate that the device emits with smaller beams mainly through the multileaf etched holes made it suitable for fiber-optic communications.