<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2006 - 20083

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chi, Jim Y.Subject: search.filters.subject.quantum-dot

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
    (2006-12-01)
    Yang, Hung-Pin D.
    ;
    Hsu, I-Chen
    ;
    Lai, Fang-I
    ;
    Lin, Gray
    ;
    Hsiao, Ru-Shang
    An InGaAs submonolayer (SML) quantum-dot photonic-crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam,is well confined by the photonic crystal structure of the device.
  • Thumbnail Image
    Item type:Item,
    High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers
    (2007-09-01)
    Lai, Fang-I.
    ;
    Yang, H. P. D.
    ;
    Lin, G.
    ;
    Hsu, I. -Chen
    ;
    Liu, Jui-Nung
    A high-power, wide operation-range single-fundamental-mode InGaAs submonolayer (SML) quantum dot (QD) photonic crystal vertical-cavity surface-emitting laser (VCSEL) for fiber-optic applications was demonstrated. Single-fundamental-mode with a threshold current (I-th) of 0.9 mA and maximum continue-wave (CW) output power of 3.8 mW at 28 mA has been achieved in the 990 nm range. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range. The far field measurement shows that the beam divergence angle remains very small and almost unchanged between 6.7-6.9 degrees, with the operation range increasing from 3 to 20 mA.
  • Thumbnail Image
    Item type:Item,
    Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range
    (2008)
    Yang, Hung-Pin D.
    ;
    Hsu, I. -Chen
    ;
    Lai, Fang-I.
    ;
    Lin, Gray
    ;
    Hsiao, Ru-Shang
    We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.