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Now showing 1 - 10 of 18

P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
(2007)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Lai, Fang-, I
;
Kuo, Hao-Chung
;
Xuan, Rong
An oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom DBR, quantum wells, and top DBR, with a holey structure for light extraction. The internally reflected spontaneous emission can be extracted out of the etched hole.
A simple model for cavity enhanced slow lights in vertical cavity surface emission lasers
(2008-04-01)
Chou, Chia-Sheng
;
Lee, Ray-Kuang
;
Peng, Peng-Chun
;
Kuo, Hao-Chung
;
Lin, Gray
We develop a simple model for the slow lights in vertical cavity surface emission lasers (VCSELs), with the combination of cavity and population pulsation effects. The dependences of probe signal power, injection bias current and wavelength detuning for the group delays are demonstrated numerically and experimentally. Up to 65 ps group delays and up to 10 GHz modulation frequency can be achieved at room temperature at a wavelength of 1.3 mu m. The most significant feature of our VCSEL device is that the thickness of the active region is only several micrometers long. Based on the experimental parameters of quantum dot VCSEL structures, we show that the resonance effect of the laser cavity plays a significant role in enhancing the group delays.
High-power single-mode vertical-cavity surface-emitting lasers with multi-leaf holey structure
(2006-09-01)
Yang, Hung-Pin D.
;
Hsu, I-Chen
;
Lai, Fang-I
;
Kuo, Hao-Chung
;
Chi, Jim Y.
A single-mode oxide-confined vertical-cavity surface-emitting laser (VCSEL) with multi-leaf holey structure for fiber-optic applications is demonstrated. Single fundamental mode continuous-wave output power of over 3 mW has been achieved in the 850 nm range, with a threshold current of approximately 0.5 mA. Side-mode suppression ratio (SMSR) larger than 22 dB has been measured.
Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
(2006-12-01)
Yang, Hung-Pin D.
;
Hsu, I-Chen
;
Lai, Fang-I
;
Lin, Gray
;
Hsiao, Ru-Shang
An InGaAs submonolayer (SML) quantum-dot photonic-crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam,is well confined by the photonic crystal structure of the device.
Characteristics of cross-shaped polarization-switching vertical-cavity surface-emitting lasers for dual-channel communications
(2007-04-01)
Yang, Hung-Pin D.
;
Hsu, I-Chen
;
Lai, Fang-I
;
Lin, Gray
;
Kuo, Hao-Chung
The polarization switching of a cross-shaped vertical-cavity surface-emitting laser (VCSEL) for dual-channel communications is demonstrated. The polarization of the lasing output is controlled by the asymmetry in geometry of the device and direction of current injection. High output power ratio of over 5, between two orthogonal (perpendicular) polarization directions has been achieved. The lasing output of the device can be switched between two nearly orthogonal directions.
Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
(2007-05-01)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Lai, Fang-I
;
Kuo, Hao-Chung
;
Chi, Jim Y.
A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
(2010-05-01)
Yang, Hung-Pin D.
;
Yeh, Zao-En
;
Lin, Gray
;
Kuo, Hao-Chung
;
Chi, Jim Y.
An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range. (C) 2010 Elsevier Ltd. All rights reserved.
Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs
(2007-06-01)
Yang, Hung-Pin D.
;
Hsu, I-Chen
;
Lai, Fang-I
;
Lin, Gray
;
Hsiao, Ru-Shang
An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiberoptic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current. (C) 2007 Elsevier B.V. All rights reserved.
Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
(2007-06-01)
Yang, Hung-Pin D.
;
Chen, I-Liang
;
Lee, Chen-Hong
;
Chiou, Chih-Hong
;
Lee, Tsin-Dong
We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.
High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers
(2007-09-01)
Lai, Fang-I.
;
Yang, H. P. D.
;
Lin, G.
;
Hsu, I. -Chen
;
Liu, Jui-Nung
A high-power, wide operation-range single-fundamental-mode InGaAs submonolayer (SML) quantum dot (QD) photonic crystal vertical-cavity surface-emitting laser (VCSEL) for fiber-optic applications was demonstrated. Single-fundamental-mode with a threshold current (I-th) of 0.9 mA and maximum continue-wave (CW) output power of 3.8 mW at 28 mA has been achieved in the 990 nm range. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range. The far field measurement shows that the beam divergence angle remains very small and almost unchanged between 6.7-6.9 degrees, with the operation range increasing from 3 to 20 mA.

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