<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2011 - 20153

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chia, C. H.Subject: search.filters.subject.Molecular beam epitaxy

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy
    (2015-09-01)
    Fan, W. C.
    ;
    Huang, S. H.
    ;
    Chou, W. C.
    ;
    Tsou, M. H.
    ;
    Yang, C. S.
    Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by low-temperature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 40 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of Zaire QDs grown on ZnSe buffer layers because the strain between ZaTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch\'s stretching exponential well fits the decay profiles of ZaTe/Zn1-xMgxSe QDs. (C) 2015 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Magneto-optical properties of ZnMnTe/ZnSe quantum dots
    (2011-05-15)
    Fan, W. C.
    ;
    Ku, J. T.
    ;
    Chou, W. C.
    ;
    Chen, W. K.
    ;
    Chang, W. H.
    The sigma(+) and sigma(-) circularly polarized time-integrated and time-resolved Photoluminescence (PL) measurements were employed to investigate the carrier spin dynamics of ZnMnTe/ZnSe Quantum Dots (QDs) grown on GaAs substrates by molecular beam epitaxy. The Kohlrausch's stretching exponential function well correlates both the sigma(+) and sigma(-) decay profiles. The measured spin relaxation time is about 23 ns. (C) 2010 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy
    (2013-09-01)
    Chien, K. F.
    ;
    Hsu, W. L.
    ;
    Tzou, A. J. .
    ;
    Lin, Y. C.
    ;
    Chou, W. C.
    ` The thermal-activated carrier transfer processes in a Zn0.98Cd0.020 thin film grown by plasma-assisted molecular beam epitaxy were investigated using temperature-dependent and time-resolved photoluminescence (PL) spectroscopy. As the temperature increases from 50 to 220 K, the carriers transfer from shallow to deep localized states. Additionally, the carriers escape from the deep localized states above 220 K due to an activation energy of about 19 meV. (c) 2013 Elsevier B.V. All rights reserved.