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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chia, C. H.Subject: search.filters.subject.zinc compounds

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Now showing 1 - 3 of 3
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    Time-resolved photoluminescence of isoelectronic traps in ZnSe1-xTex semiconductor alloys
    (2008-12-15)
    Lin, Y. C.
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    Chou, W. C.
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    Fan, W. C.
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    Ku, J. T.
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    Ke, F. K.
    Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-xTex. As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
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    High-excitation effect on photoluminescence of sol-gel ZnO nanopowder
    (2010-02-22)
    Chia, C. H.
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    Lai, Y. J.
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    Han, T. C.
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    Chiou, J. W.
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    Hu, Y. M.
    We studied the power-dependent photoluminescence of ZnO nanopowder grown by sol-gel method at low temperature. At moderate optical pumping intensity, two nonlinear emission bands due to the radiative recombination of free biexciton and the inelastic exciton-exciton scattering were detected. We found that the threshold of the excitation density for the emergence of the nonlinear emission bands is low (< 18 W/cm(2)) in sol-gel ZnO nanopowders.
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    Biexciton emission from sol-gel ZnMgO nanopowders
    (2010-05-10)
    Chia, C. H.
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    Lai, Y. J.
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    Hsu, W. L.
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    Han, T. C.
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    Chiou, J. W.
    We studied the power-dependent photoluminescence of Zn(1-x)Mg(x)O nanopowders grown by sol-gel method, at temperature T = 100 K. At moderate optical pumping intensity, a nonlinear emission band due to the radiative recombination of free biexcitons was detected. We found that the free biexciton binding energies of Zn(1-x)Mg(x)O nanopowder (0.01 <= x <= 0.05) are nearly constant (13.5 +/- 1.5 meV). (C) 2010 American Institute of Physics. [doi:10.1063/1.3428780]