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Author: search.filters.author.Chiang, K. C.Subject: search.filters.subject.capacitor

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Now showing 1 - 3 of 3
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    Item type:Item,
    RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density
    (2006-09-01)
    Huang, C. C.
    ;
    Chiang, K. C.
    ;
    Kao, H. L.
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    Chin, Albert
    ;
    Chen, W. J.
    A very high density of 35 fF/mu m(2) is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa = 169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 X 10(-7) A/cm(2) at 1 V are simultaneously measured. The small voltage dependence of a capacitance Delta C/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.
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    Item type:Item,
    High-performance SrTiO3 MIM capacitors for analog applications
    (2006-09-01)
    Chiang, K. C.
    ;
    Huang, Ching-Chien
    ;
    Chen, G. L.
    ;
    Chen, Wen Jauh
    ;
    Kao, H. L.
    TAN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/mu m(2) have been developed by using a high-kappa (kappa = 147-169) SrTiO3 dielectric containing nanometersized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V-2) voltage coefficient of the capacitance and the 3 x 10(-8) A/cm(2) leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.
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    Item type:Item,
    High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuning
    (2007-03-01)
    Chiang, K. C.
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    Cheng, C. H.
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    Pan, H. C.
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    Hsiao, N.
    ;
    Chou, C. P.
    Using low-cost and high work-function Ni, a low leakage current of 5 x 10(-6) A/cm(2) at 125 degrees C is obtained in a high 25-fF/mu m(2)-density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 degrees C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall k value beyond previous laminate structure.