學術出版;;Publications
Permanent URI for this communityhdl:11536/1
收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.
Browse
2 results
🏛️國立陽明交通大學機構典藏
Search Results
Item type:Item, Characterization of antenna effect by nondestructive gate current measurement(1996-08-15) ;Lin, HC ;Chien, CH ;Huang, TY ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsA novel method is proposed for the effective characterization of plasma-charge-induced damage on thin gate oxides. We have found that the gate current measured at V-g(gate voltage) = V-th(threshold voltage) under a low drain bias (e.g., 0.1 V) is a good indicator of the damage. Since the proposed method requires only low bias voltages, it does not cause additional damage to the devices. The proposed gate current measurement is also easy to incorporate to device measurement routines without an extra stressing step, and thus provides a simple and efficient damage indicator for studying plasma-charge-induced damage.Item type:Item, Characterization of antenna effect by nondestructive gate current measurement(1996-08-15) ;Lin, HC ;Chien, CH ;Huang, TY ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsA novel method is proposed for the effective characterization of plasma-charge-induced damage on thin gate oxides. We have found that the gate current measured at V-g(gate voltage) = V-th(threshold voltage) under a low drain bias (e.g., 0.1 V) is a good indicator of the damage. Since the proposed method requires only low bias voltages, it does not cause additional damage to the devices. The proposed gate current measurement is also easy to incorporate to device measurement routines without an extra stressing step, and thus provides a simple and efficient damage indicator for studying plasma-charge-induced damage.