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Author: search.filters.author.Chien, CHSubject: search.filters.subject.dielectric breakdown

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Now showing 1 - 3 of 3
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    Evaluation of plasma charging damage in ultrathin gate oxides
    (1998-03-01)
    Lin, HC
    ;
    Chen, CC
    ;
    Chien, CH
    ;
    Hsein, SK
    ;
    Wang, MF
    Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.
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    Item type:Item,
    Improved immunity to plasma damage in ultrathin nitrided oxides
    (2000-01-01)
    Chen, CC
    ;
    Lin, HC
    ;
    Chang, CY
    ;
    Liang, MS
    ;
    Chien, CH
    Plasma-induced damage in various 3-nm thick gate oxides (i.e., pure O-2 and N2O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition, Gate leakage current measurements indicated that large leakage current occurs at the wafer center as well as at the wafer edge for pMOS devices, while it occurs only at the wafer center for nMOS devices, These interesting observations could be explained by the polarity dependence of ultrathin oxides in charge-to-breakdown measurements. Additionally, ultrathin N2O-nitrided oxides show superior immunity to charging damage, especially for pMOS devices.
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    Item type:Item,
    Plasma-induced charging damage in ultrathin (3-nm) gate oxides
    (2000-07-01)
    Chen, CC
    ;
    Lin, HC
    ;
    Chang, CY
    ;
    Liang, MS
    ;
    Chien, CH
    Plasma-induced damage in various 3-nm-thick gate oxides (i.e., pure oxides and N2O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Both charge-to-break-down and gate leakage current measurements indicated that large leakage current occurs at the wafer center as well as the wafer edge for pMOS devices, while only at the wafer center for nMOS devices. These interesting observations could be explained by the strong polarity dependence of ultra-thin oxides in charge-to breakdown measurements of nMOS devices. In addition, pMOS devices were found to be more susceptible to charging damage, which can be attributed to the intrinsic polarity dependence in tunneling current between n- and p-MOSFET,s. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage can be significantly suppressed in N2O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided oxides were also found to be more robust when subjected to high temperature stressing. Therefore, nitrided oxides appear to be very promising for reducing plasma charging damage in future ULSI technologies employing ultrathin gate oxides.