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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chien, Chao-HsinSubject: search.filters.subject.surface treatment

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    Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment
    (2016-09)
    Tsai, Ming-Li
    ;
    Ko, Jun-Yu
    ;
    Wang, Shin-Yuan
    ;
    Chien, Chao-Hsin
    ;
    電子工程學系及電子研究所
    We investigate p-type GaSb MOS capacitors with various HfO2 thicknesses grown using an atomic layer deposition. GaSb surfaces treated with ex-situ chemical solution and in situ remote hydrogen plasma are inspected. After a series of etching steps, the GaSb surfaces exhibit smooth topography, indicating that this combination of treatments is capable of realizing ultrathin dielectric deposition. After etching processes, the ultrathin (approximately 3 nm) HfO2 layer deposited successfully on GaSb exhibit high-permittivity (approximately 21) properties as well as equivalent oxide thickness (EOT) of 0.75 nm, which can be attributed to the flat surface. To the best of our knowledge, the EOT of GaSb capacitor prepared using the exploited approach is record low. Furthermore, we find that the interlayer present after hydrogen plasma treatment and forming gas annealing could efficiently passivate interface state density and achieve high C-V modulation. Compared with the benchmark of gate leakage current versus EOT, the electrical performance with low gate leakage current of the GaSb MOS capacitors demonstrates the high feasibility of the proposed treatments.
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    Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks
    (2007-09-01)
    Chen, Shih-Chang
    ;
    Chen, Yung-Yu
    ;
    Chang, Yu-Tzu
    ;
    Lou, Jen-Chung
    ;
    Kin, Kon-Tsu
    In this study, we improved the interfacial properties of high-kappa gate stacks with the surface treatment of ozonated water prior to deposition of hafnium oxide (HfO2). We demonstrated that the Ozone-oxide improved the electrical properties of the HfO2 gate stack interface in terms of its smoother interface, lower leakage current density, narrower hysteresis width, superior charge trapping effect, and reliability. From these experimental results, we believe that treatment with ozone is an efficient method for the preparation of high-quality interfaces between HfO2 and silicon surfaces.