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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chin, ASubject: search.filters.subject.Schottky

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Now showing 1 - 3 of 3
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    Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
    (2004-05-01)
    Zhu, SY
    ;
    Yu, HY
    ;
    Whang, SJ
    ;
    Chen, JH
    ;
    Shen, C
    This letter presents a low-temperature process to fabricate Schottky-barrier silicide source/drain transistors (SSDTs) with high-kappa gate dielectric and metal gate. For p-channel SSDTs (P-SSDT) using PtSi source/drain (S/D), excellent electrical performance of I-on/I-off similar to 10(7) - 10(8) and subthreshold slope of 66 mV/dec have been achieved. For n-channel SSDTs (N-SSDTs) using DySi2-x S/D, I-on/I-off can reach similar to 10(5) at V-ds of 0.2 V with two subthreshold slopes of 80 and 340 mV/dec. The low-temperature process relaxes the thermal budget of high-kappa dielectric and metal-gate materials to be used in the future generation CMOS technology.
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    Item type:Item,
    N-type Schottky barrier source/drain MOSFET using ytterbium silicide
    (2004-08-01)
    Zhu, SY
    ;
    Chen, JD
    ;
    Li, MF
    ;
    Lee, SJ
    ;
    Singh, J
    Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x, silicided N-SSDT has demonstrated a very promising characteristic with a recorded high I-on/I-off ratio of similar to10(7) and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.
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    Item type:Item,
    Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate
    (2005-02-01)
    Zhu, SY
    ;
    Li, R
    ;
    Lee, SJ
    ;
    Li, MF
    ;
    Du, AY
    Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as similar to5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.