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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chin, ASubject: search.filters.subject.SiGe

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Now showing 1 - 4 of 4
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    High temperature formed SiGeP-MOSFET's with good device characteristics
    (2000-07-01)
    Wu, YH
    ;
    Chin, A
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We have used a simple process to fabricate Si0.3Ge0.7/Si p-MOSFET's. The Si0.3Ge0.7 is formed using deposited Ge followed by 950 degrees C rapid thermal annealing and solid phase epitaxy that is process compatible with existing VLSI. Hole mobility of 250 cm(2)/Vs is obtained from Si0.3Ge0.7 p-MOSFET that is similar to two times higher than Si control devices and results in a consequent substantially higher current drive. The 228 Angstrom Si0.3Ge0.7 thermal oxide grown at 1000 degrees C has a high breakdown field of 15 MV/cm, low interface trap density (D-it) of 1.5 x 10(11) eV(-1) cm(-2), and low oxide charge of 7.2 x 10(10) cm(-2). The source-drain junction leakage after implantation and 950 degrees C RTA is also comparable with Si counterpart.
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    Item type:Item,
    Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si
    (2002-08-01)
    Lin, CY
    ;
    Chen, WJ
    ;
    Lai, CH
    ;
    Chin, A
    ;
    Liu, J
    We have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/square on both P+N and N+P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 x 10(-8) A/cm(2) and 2 x 10(-7) A/cm(2) are obtained for Ni germano-silicide on P+ N and N+ P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.
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    La2O3/Si0.3Ge0.7 p-MOSFETs with high hole mobility and good device characteristics
    (2002-12-01)
    Huang, CH
    ;
    Chen, SB
    ;
    Chin, A
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We have studied the high-k La2O3 p-MOSFETs on Si0.3Ge0.7 substrate. Nearly identical gate oxide current, capacitance density, and time-dependent dielectric breakdown (TDDB) re obtained for La2O3/Si and La2O3/Si0.3Ge0.7 devices that indicate the excellent Si0.3Ge0.7 quality without any side effect. The measured hole mobility in nitrided La2O3/Si p-MOSFETs is 31 cm(2)/V-s and comparable with published data in nitrided HfO2/Si p-MOSFETs. In sharp contrast, a higher mobility of 55 cm(2)/V-s is measured in La2O3/Si0.3Ge0.7 p-MOSFET, which is improved by 1.8 times as compared with La2O3/Si control devices. The high mobility in Si0.3Ge0.7 p-MOSFET gives another step for integrating high-k gate dielectrics into VLSI process.
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    Item type:Item,
    Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes
    (2004-01-01)
    Lin, CY
    ;
    Chin, A
    ;
    Hou, YT
    ;
    Li, MF
    ;
    McAlister, SP
    We have fabricated Sn:In2O3 (ITO)-Al2O3 dielectric on Si1-xGex-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 mum, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.