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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chin, ASubject: search.filters.subject.dielectric constant

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Now showing 1 - 6 of 6
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    Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
    (2002-02-17)
    Sun, CL
    ;
    Chen, SY
    ;
    Yang, MY
    ;
    Chin, A
    ;
    材料科學與工程學系
    Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
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    High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
    (2002-04-01)
    Chen, SB
    ;
    Lai, CH
    ;
    Chin, A
    ;
    Hsieh, JC
    ;
    Liu, J
    We have investigated the electrical characteristics of Al2O3 and AlTiOx MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
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    Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
    (2002-04-01)
    Chen, SB
    ;
    Lai, CH
    ;
    Chan, KT
    ;
    Chin, A
    ;
    Hsieh, JC
    We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime.
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    Item type:Item,
    Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
    (2003-02-17)
    Sun, CL
    ;
    Chen, SY
    ;
    Yang, MY
    ;
    Chin, A
    ;
    材料科學與工程學系
    Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Item type:Item,
    High-density MIM canpacitors using AlTaOx dielectrics
    (2003-05-01)
    Yang, MY
    ;
    Huang, CH
    ;
    Chin, A
    ;
    Zhu, CX
    ;
    Li, MF
    The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
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    Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
    (2003-10-01)
    Yang, MY
    ;
    Huang, CH
    ;
    Chin, A
    ;
    Zhu, CX
    ;
    Cho, BJ
    Using high-kappa, Al2O3 doped Ta2O5 dielectric, we have obtained record high MINI capacitance density of 17 fF/mum(2) at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 x 10(-7) A/cm(2). In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 x 10(-12) A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-mum MOSFET. This very high capacitance density with good MINI capacitor characteristics can significantly reduce the chip size of RF ICs.