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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chin, AlbertSubject: search.filters.subject.HfLaO

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Now showing 1 - 5 of 5
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    Low-V-t TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions
    (2009-01-01)
    Lin, S. H.
    ;
    Liu, S. L.
    ;
    Yeh, F. S.
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    Chin, Albert
    ;
    電子工程學系及電子研究所
    We report low-threshold-voltage (V-t) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degrees C. The gate-first and self-aligned TaN/HflLaO n-MOSFETs using Ni/Sb SPID-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm(2)/V . s at a small 1.3-nm equivalent oxide thickness.
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    Low subthreshold swing HfLaO/pentacene organic thin-film transistors
    (2008-03-01)
    Chang, M. R.
    ;
    Lee, P. T.
    ;
    McAlister, S. P.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    We have integrated a high-kappa HfLaO dielectric into pentacene-based organic thin-film transistors. We measured good device performance, such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of - 1.3 V, and a field-effect mobility of 0.71 cm(2)/V.s. This occurred along with an ON-OFF state drive current ratio of 1.0 x 10(5), when the devices were operated at only 2 V. The performance is due to the high gate-capacitance density of 950 nF/cm(2) that is given by the HftaO dielectric, which is achieved at an equivalent oxide thickness of only 3.6 nm with a low leakage current of 5.1 x 10(-7) A/cm(2) at 2 V.
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    Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric
    (2009-02-01)
    Chang, M. F.
    ;
    Lee, P. T.
    ;
    McAlister, S. P.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    Pentacene organic thin-film transistors (OTFTs) with a high-k HfLaO dielectric were integrated onto flexible polyimide substrates. The pentacene OTFTs exhibited good performance, such as a low subthreshold swing of 0.13 V/decade and a threshold voltage of -1.25 V. The field-effect mobility was 0.13 cm(2)/V . s at an operating voltage as low as only 2.5 V. These characteristics are attractive for high-switching-speed and low-power applications.
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    High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric
    (2009-12-01)
    Su, N. C.
    ;
    Wang, S. J.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low V(T) of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm(2)/V . s, and large I(on)/I(off) ratio of 5 x 10(7). These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.
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    Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing
    (2010-07-01)
    Su, Nai-Chao
    ;
    Wang, Shui-Jinn
    ;
    Huang, Chin-Chuan
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    Chen, Yu-Han
    ;
    Huang, Hao-Yuan
    A flexible thin-film transistor (TFT) was made by integrating a high-kappa HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm(2)/V . s, and an acceptable ON/OFF current ratio of 2 x 10(5). The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.