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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chin, AlbertSubject: search.filters.subject.TiO2

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Now showing 1 - 5 of 5
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    High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators
    (2009-07-01)
    Lin, S. H.
    ;
    Chiang, K. C.
    ;
    Chin, Albert
    ;
    Yeh, F. S.
    ;
    電子工程學系及電子研究所
    We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 x 10(-8) A/cm(2) at 125 degrees C was obtained with a high 38-fF/mu m(2) capacitance density and better than the ZrO2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO2/ZrO2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO2 as compared with that of ZrO2 to preserve the high capacitance density.
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    Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO2/ZrO2 Dielectrics
    (2009-12-01)
    Lin, S. H.
    ;
    Chiang, K. C.
    ;
    Yeh, F. S.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    We have studied the stress reliability of high-k Ni/TiO2/ZrO2/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO2 thickness on ZrO2 improves the 125-degrees C leakage current, capacitance variation (Delta C/C), and long-term reliability. For a high density of 26 fF/mu m(2), good extrapolated ten-year reliability of small Delta C/C similar to 0.71% is obtained for the Ni/10-nm-TiO2/6-5-nm-ZrO2/TiN device at 2.5-V operation.
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    Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer
    (2011-12-01)
    Cheng, C. H.
    ;
    Chen, P. C.
    ;
    Wu, Y. H.
    ;
    Yeh, F. S.
    ;
    Chin, Albert
    Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
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    Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering
    (2017-10-01)
    Kruchinin, V. N.
    ;
    Perevalov, T. V.
    ;
    Atuchin, V. V.
    ;
    Gritsenko, V. A.
    ;
    Komonov, A. I.
    Titanium dioxide (anatase, a-TiO2) films have been prepared by electron beam sputtering of a TiO2 target in reactive atmosphere and their structural, microstructural, and optical properties were evaluated by reflection high- energy electron diffraction (RHEED) and x-ray diffraction (XRD) analyses, atomic force microscopy (AFM), and spectroscopic ellipsometry (SE). Different reflection models for determination of film optical parameters were tested and compared. The dispersive optical parameters were defined using the Tauc-Lorentz model by SE in the photon energy range of E = 1.12-4.96 eV. The films were transparent at E < 3 eV, but noticeable absorption was detected at E > 3 eV. The bandgap was estimated at the level of E (g) ae 3.44 eV.
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    GeO2/PZT Resistive Random Access Memory Devices With Ni electrode
    (2013)
    Chou, Kun-I
    ;
    Cheng, Chun-Hu
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We report a resistive random-access memory (RRAM) using stacked GeO2 and PZT. Under unipolar mode operation, the Ni/GeO2/PZT/TaN RRAM shows a good DC cycling of 2x10(3) cycles, 85 degrees C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.