<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2006 - 20074

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chin, AlbertSubject: search.filters.subject.capacitor

Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Item type:Item,
    RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density
    (2006-09-01)
    Huang, C. C.
    ;
    Chiang, K. C.
    ;
    Kao, H. L.
    ;
    Chin, Albert
    ;
    Chen, W. J.
    A very high density of 35 fF/mu m(2) is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa = 169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 X 10(-7) A/cm(2) at 1 V are simultaneously measured. The small voltage dependence of a capacitance Delta C/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.
  • Thumbnail Image
    Item type:Item,
    High-performance SrTiO3 MIM capacitors for analog applications
    (2006-09-01)
    Chiang, K. C.
    ;
    Huang, Ching-Chien
    ;
    Chen, G. L.
    ;
    Chen, Wen Jauh
    ;
    Kao, H. L.
    TAN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/mu m(2) have been developed by using a high-kappa (kappa = 147-169) SrTiO3 dielectric containing nanometersized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V-2) voltage coefficient of the capacitance and the 3 x 10(-8) A/cm(2) leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.
  • Thumbnail Image
    Item type:Item,
    High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuning
    (2007-03-01)
    Chiang, K. C.
    ;
    Cheng, C. H.
    ;
    Pan, H. C.
    ;
    Hsiao, N.
    ;
    Chou, C. P.
    Using low-cost and high work-function Ni, a low leakage current of 5 x 10(-6) A/cm(2) at 125 degrees C is obtained in a high 25-fF/mu m(2)-density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 degrees C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall k value beyond previous laminate structure.
  • Thumbnail Image
    Item type:Item,
    A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention
    (2007-10-01)
    Yang, H. J.
    ;
    Chin, Albert
    ;
    Chen, W. J.
    ;
    Cheng, C. F.
    ;
    Huang, W. L.
    We describe a programmable-erasable MIS capacitor with a single high-kappa Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of similar to 6.6 fF/mu m(2), low program and erase voltages of +5 and -5 V, respectively, and a large Delta V-fb memory window of 1.5 V. In addition, the 25 degrees C data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.