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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chou, W. C.Subject: search.filters.subject.II-VI semiconductors

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Now showing 1 - 5 of 5
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    Time-resolved photoluminescence of isoelectronic traps in ZnSe1-xTex semiconductor alloys
    (2008-12-15)
    Lin, Y. C.
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    Chou, W. C.
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    Fan, W. C.
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    Ku, J. T.
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    Ke, F. K.
    Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-xTex. As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
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    A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1-xMnxO thin films grown on c-Al2O3
    (2009-03-01)
    Lin, D. Y.
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    Lin, H. J.
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    Wu, J. S.
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    Chou, W. C.
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    Yang, C. S.
    We present a systematic study of temperature-dependent reflectance (R) and photoluminescence (PL) measurements on ZnMnO films grown by plasma-assisted molecular beam epitaxy. For the first time, the three free-exciton transitions FXA (Gamma(7c)-Gamma(u)(7v)), FXB (Gamma(7c)-Gamma(9v)), and FXC (Gamma(7c)-Gamma(l)(7v)) and the longitudinal-optical phonon replicas of FXB and FXC of ZnMnO films have been clearly observed in the R spectra. The parameters describing the activation energy and the temperature dependence of the transition energy and broadening have been extracted by fitting the experimental R and PL spectra. The spectral data of ZnMnO films not only show the deterioration of crystalline quality with increasing Mn composition fraction but also indicate the Mn clustering caused by Mn atom segregation.
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    Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors
    (2010-07-26)
    Lin, Y. C.
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    Chung, H. L.
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    Chou, W. C.
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    Chen, W. K.
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    Chang, W. H.
    This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent beta followed by its monotonic increase with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473776]
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    High-excitation effect on photoluminescence of sol-gel ZnO nanopowder
    (2010-02-22)
    Chia, C. H.
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    Lai, Y. J.
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    Han, T. C.
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    Chiou, J. W.
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    Hu, Y. M.
    We studied the power-dependent photoluminescence of ZnO nanopowder grown by sol-gel method at low temperature. At moderate optical pumping intensity, two nonlinear emission bands due to the radiative recombination of free biexciton and the inelastic exciton-exciton scattering were detected. We found that the threshold of the excitation density for the emergence of the nonlinear emission bands is low (< 18 W/cm(2)) in sol-gel ZnO nanopowders.
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    Forster resonance energy transfer in mixed-size CdTe quantum dots with optimized donor-acceptor concentration ratio
    (2011)
    Lin, Y. C.
    ;
    Chou, W. C.
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    Susha, A. S.
    ;
    Rogach, A. L.
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    電子物理學系
    The dynamics of Forster resonance energy transfer (FRET) in mixed-size water-soluble CdTe quantum dots (QDs) are studied by using photoluminescence (PL) and time-resolved PL spectroscopy. When donor concentration is increased, an enhancement of both the FRET and quantum efficiency in the mixed-size CdTe QDs films can be observed. Increasing donor concentration significantly quenches the emission intensity and lifetime in donor QDs and enhances that in acceptor QDs. However, as D/A ratios exceed 6, the emission intensity and the lifetime of acceptor QDs start to decline, reflecting a decreasing in both quantum and FRET efficiency due to a markedly declining availability of acceptor QDs.