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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chou, W. C.Subject: search.filters.subject.Semiconducting II-VI materials

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Now showing 1 - 8 of 8
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    Optical characterization of isoelectronic ZnSe1-xOx semiconductors
    (2011-05-15)
    Lin, Y. C.
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    Chung, H. L.
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    Ku, J. T.
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    Chen, C. Y.
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    Chien, K. F.
    We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe1-xOx (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe1-xOx decreases with the increase in 0 concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent beta. (C) 2010 Elsevier B.V. All rights reserved.
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    Photoluminescence properties of MgxZn1-xO films grown by molecular beam epitaxy
    (2017-02-01)
    Wu, T. Y.
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    Huang, Y. S.
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    Hu, S. Y.
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    Lee, Y. C.
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    Tiong, K. K.
    The optical properties of MgxZn1-xO films with x=0.03, 0.06, 0.08, and 0.11 grown by molecular beam epitaxy (MBE) have been studied by temperature-dependent photoluminescence (PL) measurement. It is presented that the full-width at half-maximum (FWHM) of the 12 K PL spectrum of MgZnO films increases with increasing Mg concentration and would deviate significantly from the simulation curve of Schubert model with higher Mg contents. The abnormal broader PL FWHM is inferred from larger compositional fluctuation by incorporating higher Mg contents, which results in larger effect of excitonic localization to induce more significant S-shaped behavior of the PL peak energy with temperature dependence. Additionally, the degree of localization increases as the linear proportion of the PL FWHM, indicating that the excitonic behavior in MgZnO films belong to the strong localization effect.
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    Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy
    (2015-09-01)
    Fan, W. C.
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    Huang, S. H.
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    Chou, W. C.
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    Tsou, M. H.
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    Yang, C. S.
    Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by low-temperature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 40 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of Zaire QDs grown on ZnSe buffer layers because the strain between ZaTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch\'s stretching exponential well fits the decay profiles of ZaTe/Zn1-xMgxSe QDs. (C) 2015 Elsevier B.V. All rights reserved.
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    Magneto-optical properties of ZnMnTe/ZnSe quantum dots
    (2011-05-15)
    Fan, W. C.
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    Ku, J. T.
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    Chou, W. C.
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    Chen, W. K.
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    Chang, W. H.
    The sigma(+) and sigma(-) circularly polarized time-integrated and time-resolved Photoluminescence (PL) measurements were employed to investigate the carrier spin dynamics of ZnMnTe/ZnSe Quantum Dots (QDs) grown on GaAs substrates by molecular beam epitaxy. The Kohlrausch's stretching exponential function well correlates both the sigma(+) and sigma(-) decay profiles. The measured spin relaxation time is about 23 ns. (C) 2010 Elsevier B.V. All rights reserved.
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    The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy
    (2013-09-01)
    Tzou, A. J.
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    Chien, K. F.
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    Lai, H. Y.
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    Ku, J. T.
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    Lee, L.
    The growth and optical properties of self-assembled ZnO nanorods grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PA-MBE) were studied. By controlling the Zn/O flux ratio, the growth of ZnO nanorods on Si(111) substrate without catalyst has been achieved. Scanning electron microscopy (SEM) shows the ZnO nanorods with various density and diameter could be controlled. Photoluminescence (PL) measurements exhibit nice optical properties. The sharp near band edge PL emission with full width at half maximum (FWHM) of about 17 meV indicates that the ZnO nanorods could be used as the high efficient photonic devices. Crown Copyright (c) 2013 Published by Elsevier B.V. All rights reserved.
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    Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy
    (2013-09-01)
    Chien, K. F.
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    Hsu, W. L.
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    Tzou, A. J. .
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    Lin, Y. C.
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    Chou, W. C.
    ` The thermal-activated carrier transfer processes in a Zn0.98Cd0.020 thin film grown by plasma-assisted molecular beam epitaxy were investigated using temperature-dependent and time-resolved photoluminescence (PL) spectroscopy. As the temperature increases from 50 to 220 K, the carriers transfer from shallow to deep localized states. Additionally, the carriers escape from the deep localized states above 220 K due to an activation energy of about 19 meV. (c) 2013 Elsevier B.V. All rights reserved.
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    Optical properties of Zn1-xMnxO thin films grown by molecular beam epitaxy
    (2013-09-01)
    Chien, K. F.
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    Yang, Y. L.
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    Tzou, A. J.
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    Chou, W. C.
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    電子物理學系
    Zn(1-x)Mn(x)0 (x=0-0.061) thin films were grown by molecular beam epitaxy (MBE) system. Transmittance shows an increase of the band gap with the increasing Mn concentration. Resonant Raman scattering (RRS) spectra showed 11 longitudinal optical phonon lines for the Zn1-xMnxO samples. For the Zn0.997Mn0.003O sample, circular polarization degree of 9% was observed at magnetic field B=5 T. The dependence of circular polarization rate on the magnetic field intensity exhibits Brillouin type para-magnetism. (c) 2012 Elsevier B.V. All rights reserved.
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    Influence of Zn/O flux ratio and Mn-doped ZnO buffer on the plasma-assisted molecular beam epitaxy of ZnO on c-plane sapphire
    (2008-10-15)
    Wang, J. S.
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    Yang, C. S.
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    Liou, M. J.
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    Wu, C. X.
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    Chiu, K. C.
    This work investigated the influence of Zn/O flux ratio and Mn-doped ZnO buffer layer on the epitaxial growth of ZnO grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Atomic force microscopy (AFM), photoluminescence (PL) and X-ray diffraction (XRD) measurements indicated that a small amount residual strain of ZnO epilayers was further relaxed under stoichiometric growth conditions due to the better surface migration of the adatoms. Moreover, we observed that a small amount of Mn doping led to obtain a flatter surface with stronger lattice relaxation maybe due to the greatly enhanced surface migration of the adatoms. By adding a Mn-doped ZnO buffer layer the optical and electrical properties of the ZnO epilayers had significant improvement. (c) 2008 Elsevier B.V. All rights reserved.