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Effects of substrate temperature on properties of Alq3 amorphous layers prepared by vacuum deposition
(2006-01-01)
Chiu, K. C.
;
Jian, Z. A.
;
Luo, Y. Z.
;
Chung, J. M.
;
Tang, S. J.
In this report, various organic Alq3 amorphous layers are prepared by vacuum deposition at different substrate temperatures T-sub (from 30 to 180 degrees C). The surface morphology, structural information, electrical and optical properties of these as-deposited layers are investigated by atomic force microscopy, X-ray diffraction, J-E curves, and photoluminescence studies, respectively. Furthermore, a temperature dependence of dark electrical conductivity sigma(T) deduced from J-E curves of these organic amorphous layers is presented. Finally, effects from T-sub on the physical properties of these organic Alq3 amorphous layers are discussed and a model based on a thermal interconversion between Alq3 isomers is proposed to explain these experimental results.
Time-resolved photoluminescence of isoelectronic traps in ZnSe1-xTex semiconductor alloys
(2008-12-15)
Lin, Y. C.
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Chou, W. C.
;
Fan, W. C.
;
Ku, J. T.
;
Ke, F. K.
Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-xTex. As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1-xMnxO thin films grown on c-Al2O3
(2009-03-01)
Lin, D. Y.
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Lin, H. J.
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Wu, J. S.
;
Chou, W. C.
;
Yang, C. S.
We present a systematic study of temperature-dependent reflectance (R) and photoluminescence (PL) measurements on ZnMnO films grown by plasma-assisted molecular beam epitaxy. For the first time, the three free-exciton transitions FXA (Gamma(7c)-Gamma(u)(7v)), FXB (Gamma(7c)-Gamma(9v)), and FXC (Gamma(7c)-Gamma(l)(7v)) and the longitudinal-optical phonon replicas of FXB and FXC of ZnMnO films have been clearly observed in the R spectra. The parameters describing the activation energy and the temperature dependence of the transition energy and broadening have been extracted by fitting the experimental R and PL spectra. The spectral data of ZnMnO films not only show the deterioration of crystalline quality with increasing Mn composition fraction but also indicate the Mn clustering caused by Mn atom segregation.
Interrelation of transport and optical properties in gold nanoclusters
(2010-09-20)
Shu, G. W.
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Chen, T. Y.
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Shen, J. L.
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Lin, C. A. J.
;
Chang, W. H.
Temperature dependence of the electrical conductivity and photoluminescence (PL) in Au nanoclusters (NCs) is investigated. The correlation of the conductivity and PL in Au NCs at different temperatures is evident: (i) for T < 50 K, both the conductivity and PL intensity decrease with temperature, which suggests thermal structural fluctuations; (ii) for 50 K < T < 90 K, conductivity and PL are explained by variable range hopping; (iii) for 90 K < T < 170 K, simple thermal activated hopping dominates in conductivity, with a rate-equation model proposed to analyze the carrier transfer in PL. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3491288]
Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors
(2010-07-26)
Lin, Y. C.
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Chung, H. L.
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Chou, W. C.
;
Chen, W. K.
;
Chang, W. H.
This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent beta followed by its monotonic increase with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473776]
Light-induced and holographic properties of ruthenium and manganese co-doped Bi4Ge3O12 crystals
(2010-07-01)
Lin, S. H.
;
Marinova, V.
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Lin, Y. C.
;
Petrova, D.
;
Chou, W. C.
The effect of Ru + Mn co-doping on the light-induced properties of Bi4Ge3O12 (BGO) crystals is studied and compared with single Ru- and Mn-doped crystals. Optical absorption spectra of Ru + Mn co-doped crystal demonstrates a photosensitivity shift to the visible spectral range. In addition, a strong photochromic effect, being fully reversible by thermal annealing is observed. It is verified by photoluminescence emission that charge traps could be manipulated under ultraviolet (UV) excitation, as the photoluminescence intensity decreases revealing the existence of the state filling effect. Ru + Mn doping leads to a faster response time during holographic recording at 633 nm and a prolonged read-out process, especially after a preliminary exposure to UV light. The ability to modify the defect structure and corresponding absorption bands suggests the future potential for optical fixing using a two-step sensitization method.
Interrelation of transport and optical properties in gold nanoclusters
(2010-09-20)
Shu, G. W.
;
Chen, T. Y.
;
Shen, J. L.
;
Lin, C. A. J.
;
Chang, W. H.
Temperature dependence of the electrical conductivity and photoluminescence (PL) in Au nanoclusters (NCs) is investigated. The correlation of the conductivity and PL in Au NCs at different temperatures is evident: (i) for T < 50 K, both the conductivity and PL intensity decrease with temperature, which suggests thermal structural fluctuations; (ii) for 50 K < T < 90 K, conductivity and PL are explained by variable range hopping; (iii) for 90 K < T < 170 K, simple thermal activated hopping dominates in conductivity, with a rate-equation model proposed to analyze the carrier transfer in PL. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3491288]
Optical characterization of ZnMnO thin films on c-Al2O3
(2008-07-01)
Lin, H. J.
;
Lin, D. Y.
;
Wu, J. S.
;
Chou, W. C.
;
Yang, C. S.
Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton ((DX)-X-0) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation.
center dot-ray induced effects in Sm-doped strontium borate glasses
(2013)
Marinova, V.
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Tomov, V.
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Chuang, C. I.
;
Lin, Y. C.
;
Lin, S. H.
Strontium borate glasses SrB4O7 doped with Sm ions are prepared by conventional melting-quenching method. The effect of center dot-ray irradiation on the glass samples is studied by measuring the absorption spectra and the photoluminescence. It is found that the center dot -ray irradiation caused partial reduction of Sm3+ to Sm2+ at room temperature. Borate framework is supposed to be responsible for the Sm3+ to Sm2+ transition.
Temperature dependence of excitonic emission in cubic CdSe thin film
(2008-01-01)
Chia, C. H.
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Yuan, C. T.
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Ku, J. T.
;
Yang, S. L.
;
Chou, W. C.
A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic Use film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton-phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16 +/- 1.5 meV was determined from the Arrhenius analysis. (C) 2007 Elsevier B.V. All rights reserved.

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