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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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1996 - 19985

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🏛️國立陽明交通大學機構典藏

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    Growth and characterization of Cd1-x-yZnxMnyTe crystals
    (1996-12-01)
    Chou, WC
    ;
    Chen, FR
    ;
    Chiang, TY
    ;
    Shin, HY
    ;
    Sun, CY
    The Cd1-x-yZnxMnyTe crystals, having potential in the development of magnetic field sensitive devices, were grown by the temperature gradient solution method at 940 degrees C. All crystals were p-type with resistivity of 10(7) Omega . cm. They have novel magneto-optical properties, and could be substitutes for the Cd1-xZnxTe ternary compounds in certain optoelectronic/integrated-optical device applications.
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    A Raman study of ZnSe at high pressure
    (1997-06-01)
    Chou, WC
    ;
    Lin, CM
    ;
    Ro, RS
    ;
    Ho, CS
    ;
    Hong, DY
    The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.
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    Item type:Item,
    Optical properties of Zn1-xMnxSe epilayers grown by molecular beam epitaxy
    (1998-04-01)
    Chou, WC
    ;
    Ro, CS
    ;
    Hong, DY
    ;
    Yang, CS
    ;
    Lin, CY
    Zn1-xMnxSe (x less than or equal to 0.78) epilayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward [010] by the molecular beam epitaxy. The reflectivity, transmission, and photoluminescence experiments were used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increased from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incoporation of smaller Zn ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, the lattice vibration of the Zn1-xMnxSe (0 less than or equal to x less than or equal to 0.78) epilayers measured by the Raman scattering was found to follow the intermediate mode behavior of type Ib instead of type Ic. The force constants F-MnSe = 2.81 x 10(6) amu.cm(-2) and F-ZnSe = 3.96 x 10(6) amu.cm(-2) were obtained.
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    Fabrication and physical properties of radio frequency sputtered Cd1-xMnxS thin films
    (1996-10-15)
    Tsai, CT
    ;
    Chen, SH
    ;
    Chuu, DS
    ;
    Chou, WC
    ;
    電子物理學系
    Highly oriented Cd1-xMnxS thin films with a wurtzite structure were grown by the radio-frequency sputtering technique. The grain size of the Cd1-xMnxS thin films was found to decrease with an increase in the Mn concentration x. Moreover, the lattice softening effect due to the quantum size effect, the band-bowing phenomena accounted for by the band-gap correction arising from the chemical disorder, and the exchange interaction between the band carrier and the d electron of the magnetic Mn ions have been investigated.
  • Thumbnail Image
    Item type:Item,
    A Raman study of ZnSe at high pressure
    (1997-06-01)
    Chou, WC
    ;
    Lin, CM
    ;
    Ro, RS
    ;
    Ho, CS
    ;
    Hong, DY
    The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.