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Author: search.filters.author.Chou, WCSubject: search.filters.subject.molecular beam epitaxy

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    Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy
    (2002-07-01)
    Kuo, MC
    ;
    Yang, CS
    ;
    Tseng, PY
    ;
    Lee, J
    ;
    Shen, JL
    Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 10(8)/cm(2) and 10(9)/cm(2), respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Optical properties of Zn1-xCdxSe epilayers grown on (100)GaAs by molecular beam epitaxy
    (2004-08-01)
    Kuo, MC
    ;
    Chiu, KC
    ;
    Shih, TH
    ;
    Lai, YJ
    ;
    Yang, CS
    Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters beta (161 K to 368K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by Gamma(T) = Gamma(0) + Gamma(a)T + Gamma(LOI)/[exp(homega(LOI)/kT) - 1] + Gamma(LO2)/[exp(homega(LO2)/kT) - 1] + Gamma(i)exp(-/kT). The impurity binding energy, (E-b), was found to decrease as the Cd composition increases.
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    Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy
    (2006-01-15)
    Lai, YJ
    ;
    Lin, YC
    ;
    Fu, CP
    ;
    Yang, CS
    ;
    Chia, CH
    Self-assembled CdSe/ZnSe quantum dots (QDs) were grown at various growth temperatures on GaAs (0 0 1) by molecular beam epitaxy. An optimum growth temperature for CdSe/ZnSe QDs was found to be 260 degrees C. The Stranski-Krastanow (SK) growth mode was confirmed clearly by atomic force microscopy images. The coherent SK QDs were observed from 2.5 monolayers (MLs). Two types of QDs were found with the CdSe coverage of 3.0 MLs. It was attributed to a growth mode change from the coherent SK growth mode to the ripening growth mode. A schematic diagram of the growth mechanism of self-assembled CdSe QDs was presented. Moreover, the photoluminescence spectra of samples with various thicknesses were investigated. A dramatic change of optical properties confirmed that the QD structure formed with thickness above 2.5 MLs. Finally, the dot size and the density distributions were controlled after growth by in-chamber thermal annealing. For the sample grown at 3.0 MLs, the distribution of dot sizes was controlled from 6.0 to 6.5 x 10(3) nm(3) at an annealing temperature of 400 degrees C. (c) 2005 Published by Elsevier B.V.