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Author: search.filters.author.Chou, Wu-ChingSubject: search.filters.subject.Molecular beam epitaxy

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    Using nanoindentation and cathodoluminescence to identify the bundled effect of gallium nitride grown by PA-MBE
    (2017-02-05)
    Wen, Hua-Chiang
    ;
    Chou, Wu-Ching
    ;
    Chiang, Tun-Yuan
    ;
    Jeng, Yeau-Ren
    ;
    Fan, Wen-Chung
    We performed cathodoluminescence (CL) investigations on GaN NCs grown using molecular beam epitaxy. Bundled GaN was used to form NCs that were deposited onto commercial sapphire templates. The structures of the bundled NCs were analyzed using nanoindentation. The samples were grown with a T-G of 700, 800, and 850 degrees C, and the H values were 7.4 +/- 0.2 and 6.4 +/- 0.2 GPa; the E values were 308.4 +/- 4.3, 296.4 +/- 3.8, and 75.5 +/- 1.4 GPa, respectively. It is suspected that the discrepancies of the mechanical parameters obtained by various indentation methods are partially a result of the stress distribution inherent in the different orientations on the sapphire substrate. A scanning electron microscopy (SEM) system equipped with CL allows the direct comparison of SEM images and CL maps, captured from exactly the same area of the samples. In addition to the SEM and CL images, photoluminescence spectroscopy (PL) profiling was obtained by collecting the 20 K PL spectra at the samples. The PL profiling enables the distinguishing of the emissions by the 5 meV of the blueshift from 3.440 to 3.445 eV due to localization effects. The bundled GaN NCs resulted from the (0002) reflection at 34.6 degrees for a wurtzite structure and a raised intensity difference when the TG was increased from 700 to 850 degrees C. The crystal texture of the GaN can influence the mechanical properties at different TG stages. (C) 2016 Elsevier B.V. All rights reserved.
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    Investigation of omnidirectional reflection band in ZnTe/ZnSe distributed Bragg reflector
    (2015-11-15)
    Huang, Ying-Shin
    ;
    Hu, Sheng-Yao
    ;
    Lee, Yueh-Chien
    ;
    Chang, Chung-Cheng
    ;
    Tiong, Kwong-Kau
    We report the characteristics of reflectance spectra of the 15- and 20-period ZnTe/ZnSe distributed Bragg reflector grown on GaAs (001) substrates by molecular beam epitaxy. The reflectance spectra measured at various incident angles and polarizations were investigated by the theoretical curves simulated using transfer matrix method. The wavelength variation of the refractive indices described by Sellmeier equation and random thickness model were also considered for the interpretation of the experimentally observed curves. An omnidirectional reflection range defined from the edge of incident-angle-dependent reflection band with TE and TM polarizations is about 15 nm, and is consistent with the observed experimental curves. The results showed that the selected ZnTe and ZnSe materials are suitable for constructing multilayer structures having omnidirectional reflection band. (C) 2015 Elsevier B.V. All rights reserved.
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    Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dots
    (2013-09-01)
    Lee, Ling
    ;
    Fan, Wen-Chung
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    Chien, Kun-Feng
    ;
    Tzou, An-Jye
    ;
    Chou, Wu-Ching
    The growth evolution and the magneto-optical characteristics of the self-assembled single-layer ZnTe/ZnMnSe quantum dots grown by molecular beam epitaxy were investigated. As the ZnTe coverage is above 2.0 monolayers, a Stranski-Krastanov growth process is observed with a significantly increased dot density on top of two-dimensional plateaus. As the coverage exceeds 2.7 monolayers, ripened dots dominate instead. Furthermore, a saturated degree of circular polarization of 76% at applied magnetic field of 4 T and the formation of magnetic polarons with a formation time of 7.4 ns were demonstrated. (c) 2012 Elsevier B.V. All rights reserved.
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    Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
    (2011-07-29)
    Wong, Yuen-Yee
    ;
    Chang, Edward Yi
    ;
    Wu, Yue-Han
    ;
    Hudait, Mantu K.
    ;
    Yang, Tsung-Hsi
    A GaN buffer layer grown under Ga-lean conditions by plasma-assisted molecular beam epitaxy (PAMBE) was used to reduce the dislocation density in a GaN film grown on a sapphire substrate. The Ga-lean buffer, with inclined trench walls on its surface, provided an effective way to bend the propagation direction of dislocations, and it reduced the dislocation density through recombination and annihilation processes. As a result, the edge dislocation density in the GaN film was reduced by approximately two orders of magnitude to 2 x 10(8) cm(-2). The rough surface of the Ga-lean buffer was recovered using migration enhanced epitaxy (MEE), a process of alternating deposition cycle of Ga atoms and N(2) radicals, during the PAMBE growth. By combining these two methods, a GaN film with high-crystalline-quality and atomically-flat surface can be achieved by PAMBE on a lattice mismatch substrate. (C) 2011 Elsevier B.V. All rights reserved.