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Author: search.filters.author.Chou, Wu-ChingSubject: search.filters.subject.wide band gap semiconductors

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    Recombination lifetimes in InN films studied by time-resolved excitation-correlation spectroscopy
    (2009-11-01)
    Liu, Horng-Chang
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    Hsu, Chia-He
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    Chou, Wu-Ching
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    Chen, Wei-Kuo
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    Chang, Wen-Hao
    Recombination dynamics in degenerate InN were investigated by means of time-resolved excitation-correlation spectroscopy. The photoluminescence decay times are determined beyond the spectral response and temporal resolution limits of conventional photon-counting detectors. Spectral and temperature dependence of decay times reveal the effects of hole localizations on the recombination mechanisms. At low temperatures, the radiative lifetime tau(r) is insensitive to temperature and significantly longer than that predicted for the radiative band-to-band recombination, indicative of a transition dominated by the free-to-bound recombination without k conservation. Above a certain temperature determined by the electron concentration, we find tau(r)similar to T(3/2), as expected for the band-to-band transition when the k-selection rule holds. We determine a lower limit for the bimolecular recombination coefficient B in InN at 300 K as 5.6x10(-11) cm(3)/s.
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    Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition
    (2009-02-09)
    Tsai, Wen-Che
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    Lin, Feng-Yi
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    Ke, Wen-Cheng
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    Lu, Shu-Kai
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    Cheng, Shun-Jen
    We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E(2) mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5x10(-3) is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.
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    The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE
    (2010)
    Wong, Yuen-Yee
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    Chang, Edward Yi
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    Yang, Tsung-Hsi
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    Chang, Jet-Rung
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    Ku, Jui-Tai
    The role played by different types of threading dislocations (TDs) on the electrical properties of AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy (MBE) was investigated. Samples with different defect structures and densities were prepared and measurements were taken from the same sample to study the correlative behavior of various TDs. From the Hall measurement, the electron mobility in two-dimensional electron gas channel was mainly controlled by the edge dislocation, which has a dominant amount in the material. The edge TDs acted as Coulomb scattering centers inside the channel and reduces the carrier mobility and increased its resistance. Screw TDs played a much significant role than edge TDs in determining the reverse-bias leakage current of Schottky barrier diodes. Leakage current is affected slightly by the reduction of free carrier density in the channel for samples with a higher edge TD density, but screw TD, which acted as the current leakage path, was more deleterious to the reverse-bias leakage current of AlGaN/GaN structure. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3392365] All rights reserved.