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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chu, JTSubject: search.filters.subject.GaN

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Now showing 1 - 4 of 4
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    Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
    (2005-01-01)
    Kao, CC
    ;
    Kuo, HC
    ;
    Huang, HW
    ;
    Chu, JT
    ;
    Peng, YC
    We successfully fabricated nitride-based light-emitting diodes (LEDs) with similar to 22degrees undercut sidewalls. The similar to 22degrees etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with similar to 22degrees undercut sidewalls and standard LED were 5.1 and 3 mW, respectively-a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.
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    The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
    (2006-03-01)
    Kao, CC
    ;
    Lu, TC
    ;
    Huang, HW
    ;
    Chu, JT
    ;
    Peng, YC
    The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AIN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 mu m. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 x 10(-2) and a high characteristic temperature of about 244 K.
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    Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors
    (2006-04-01)
    Peng, YC
    ;
    Kao, CC
    ;
    Huang, HW
    ;
    Chu, JT
    ;
    Lu, TC
    In this paper, we report a GaN-based microcavity light-emitting diode (MCLED) which is composed of 25 pairs of high-reflectivity GaN/AlN distributed Bragg reflector (DBR) and 6 pairs of ex-situ deposited SiO2/TiO2 dielectric mirrors. The electroluminescence peak of this structure matched well with the high reflectance area of the top and bottom DBRs, and shows a narrow emission of approximately 6.7 nm. The fabricated device also shows a more excellent performance on the stability of the emission peak wavelength while varying injection current density and operating temperature than a regular LED.
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    Room-temperature operation of optically pumped blue-violet GaN-based vertical-cavity surface-emitting lasers fabricated by laser lift-off
    (2006-04-01)
    Chu, JT
    ;
    Lu, TC
    ;
    Yao, HH
    ;
    Kao, CC
    ;
    Liang, WD
    Room-temperature optically pumped GaN-based vertical-cavity surface- emitting lasers (VCSELs) were demonstrated by laser lift-off. A VCSEL was fabricated by combining a GaN-based cavity with two dielectric distributed Bragg reflectors: SiO2/TiO2 and SiO2/Ta2O5. The Q factor of the VCSEL is 518 indicating a good interfacial layer quality of the structure. The laser emits blue-violet wavelength light at 414 nm under optical pumping at room temperature with a threshold pumping energy of 270 nJ. The laser emission has a narrow linewidth of 0.25 nm and a degree of polarization of 70%. The laser emission patterns clearly indicate a vertical lasing action of the VCSEL.