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Author: search.filters.author.Chu, Li-WeiSubject: search.filters.subject.Electrostatic discharge (ESD)

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Now showing 1 - 4 of 4
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    Compact and Low-Loss ESD Protection Design for V-Band RF Applications in a 65-nm CMOS Technology
    (2012)
    Chu, Li-Wei
    ;
    Lin, Chun-Yu
    ;
    Tsai, Shiang-Yu
    ;
    Ker, Ming-Dou
    ;
    Song, Ming-Hsiang
    Nanoscale CMOS technologies have been widely used to implement radio-frequency (RF) integrated circuits. However, the thinner gate oxide and silicided drain/source in nanoscale CMOS technologies seriously degrade the electrostatic discharge (ESD) robustness of RF circuits. Against ESD damage, on-chip ESD protection design must be included in RF circuits. As the RF circuits operating in the higher frequency band, the parasitic effect from ESD protection devices and/or circuits must be strictly limited. To provide the effective ESD protection for a 60-GHz low-noise amplifier (LNA) with less RF performance degradation, a new ESD protection design was studied in a 65-nm CMOS process. Such ESD-protected LNA with simulation/measurement results has been successfully verified in silicon chip to to achieve the 2-kV HBM ESD robustness with the lower power loss in a smaller layout area.
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    Large-Swing-Tolerant ESD Protection Circuit for Gigahertz Power Amplifier in a 65-nm CMOS Process
    (2013-02-01)
    Lin, Chun-Yu
    ;
    Tsai, Shiang-Yu
    ;
    Chu, Li-Wei
    ;
    Ker, Ming-Dou
    ;
    電子工程學系及電子研究所
    The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.
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    ESD Protection Structure with Inductor-Triggered SCR for RF Applications in 65-nm CMOS Process
    (2012)
    Lin, Chun-Yu
    ;
    Chu, Li-Wei
    ;
    Ker, Ming-Dou
    ;
    Song, Ming-Hsiang
    ;
    Jou, Chewn-Pu
    To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.
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    ESD Protection Design for 60-GHz LNA With Inductor-Triggered SCR in 65-nm CMOS Process
    (2012-03-01)
    Lin, Chun-Yu
    ;
    Chu, Li-Wei
    ;
    Ker, Ming-Dou
    ;
    電子工程學系及電子研究所
    ;
    光電工程學系
    To effectively protect the radio-frequency (RF) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance. In this paper, an SCR device assisted with an inductor is proposed to improve the turn-on efficiency for ESD protection. Besides, the inductor can be also designed to resonate with the parasitic capacitance of the SCR device at the selected frequency band for RF performance fine tuning. Experimental results of the ESD protection design with inductor-triggered SCR in a nanoscale CMOS process have been successfully verified at 60-GHz frequency. The ESD protection design with inductor-triggered SCR has been implemented in cell configuration with compact size, which can be directly used in the RF receiver circuits. To verify the RF characteristics and ESD robustness in the RF receiver, the inductor-triggered SCR has been applied to a 60-GHz low-noise amplifier (LNA). Verified in a silicon chip, the 60-GHz LNA with the inductor-triggered SCR can achieve good RF performances and high ESD robustness.