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Author: search.filters.author.Chu, Ying-HaoSubject: search.filters.subject.flexible electronics

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Now showing 1 - 5 of 5
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    Proton-Mediated Phase Control in Flexible and Transparent Mott Transistors
    (1970-01-01)
    Deng, Xing
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    Zhao, Yi-Feng
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    Zhong, Ni
    ;
    Yue, Fang-Yu
    ;
    Huang, Rong
    To meet the development of wearable and energy-efficient flexible electronics, multifunctional oxide film on soft substrate and its versatile phase control are in demand. Here, flexible VO2 film is directly deposited on mica via van der Waals epitaxy, exhibiting pronounced metal-insulator (MI) transition and infrared (IR) switching properties. Using a rubbery solid ionic gel as gate insulator, a fully flexible and transparent VO2-channel Mott transistor is successfully demonstrated. The prototype Mott transistor processes excellent mechanical flexibility and giant on/off current ratio of approximate to 10(5)% even at room temperature. Highly reversible suppression of MI transition is realized by applying small gate voltages and the nonvolatile phase modulation suggests an electrochemical reaction mechanism. X-ray diffraction and secondary-ion mass spectroscopy analyses, together with theoretical calculation, confirm that electrically controlled phase transformation is mainly caused by reversible and nonvolatile proton (H+) doping into VO2 lattices. Significant modulation of IR transmittance (>40%) is observed in the VO2 Mott transistor, which is attributed to electrically driven phase transition between insulating VO2 and metallic HxVO2 phases. The flexible and transparent Mott transistor provides a good platform for proton-mediated Mottronics and realizes novel electric control of optical characteristics, showing a promising application for flexible energy-saving smart windows.
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    Enhanced Ferroelectric Functionality in Flexible Lead Zirconate Titanate Films with In Situ Substrate-Clamping Compensation
    (1970-01-01)
    Winestook, Rachel Onn
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    Saguy, Cecile
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    Ma, Chun-Hao
    ;
    Chu, Ying-Hao
    ;
    Ivry, Yachin
    Much attention has recently been given to flexible and wearable integrated electronic devices, with a strong emphasis on real-time sensing, computing, and communication technologies. Thin ferroelectric films exhibit switchable polarization and strong electromechanical coupling, and hence are in widespread use in such technologies, albeit not when flexed. Effects of extrinsic strain on thin ferroelectric films are still unclear, mainly due to the lack of suitable experimental systems that allow cross structural-functional characterization with in situ straining. Moreover, although the effects of intrinsic strain on ferroelectric films, e.g., due to film-substrate lattice mismatch, have been extensively investigated, it is unclear how these effects are influenced by external strain. A method to strain thin films homogenously in situ is developed, allowing structural characterization as well as functional switching and piezorsponse measurements at the nanoscale, while retaining the sample under constant straining conditions. Using this method, thin films of PbZr0.2Ti0.8O3, which were grown on a flexible mica substrate, are strained to reduce substrate clamping effects and increase the tetragonality. Consequently, the domain stability is increased, the coercive field value is decreased, and imprint effects are reduced. This method also allows direct characterization of the relationship between the lattice parameters and nanoscale properties of other flexible materials.
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    Development of magnetoelectric nanocomposite for soft technology
    (2018-06-13)
    Bitla, Yugandhar
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    Chu, Ying-Hao
    ;
    材料科學與工程學系
    ;
    電子物理學系
    ;
    國際半導體學院
    The proliferation of flexible and stretchable electronics has led to substantial advancements in principles, material combinations and technologies. The integration of magnetoelectric systems in soft electronics is inevitable by virtue of their extensive applications. Recently, 2D layered materials have emerged as potential candidates due to their excellent flexibility and atomic-scale thickness scalability in addition to their interesting physics. This paper presents a new perspective on the development of magnetoelectric nanocomposites through materials engineering on a pliant mica with excellent mechanical, thermal and chemical stabilities. The unique features of 2D muscovite mica and the power of van der Waals epitaxy are expected to contribute significantly to the emerging transparent soft-technology research applications.
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    Oxide Heteroepitaxy for Flexible Optoelectronics
    (2016-11-30)
    Bitla, Yugandhar
    ;
    Chen, Ching
    ;
    Lee, Hsien-Chang
    ;
    Do, Thi Hien
    ;
    Ma, Chun-Hao
    The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite\'s superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.
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    Heteroepitaxy of Fe3O4/Muscovite: A New Perspective for Flexible Spintronics
    (2016-12-14)
    Wu, Ping-Chun
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    Chen, Ping-Fan
    ;
    Thi Hien Do
    ;
    Hsieh, Ying-Hui
    ;
    Ma, Chun-Hao
    Spintronics has captured a lot of attention since it was proposed. It has been triggering numerous research groups to make their efforts on pursuing spin-related electronic devices. Recently, flexible and wearable devices are in a high demand due to their outstanding potential in practical applications. In order to introduce spintronics into the realm of flexible devices, we demonstrate that it is feasible to grow epitaxial Fe3O4 film, a promising candidate for realizing spintronic devices based on tunneling magnetoresistance, on flexible muscovite. In this study, the heteroepitaxy of Fe3O4/muscovite is characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. The chemical composition and magnetic feature are investigated by a combination of X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. The electrical and magnetic properties are examined to show the preservation of the primitive properties of Fe3O4. Furthermore, various bending tests are performed to show the tunability of functionalities and to confirm that the heterostructures retain the physical properties under repeated cycles. These results illustrate that the Fe3O4/muscovite heterostructure can be a potential candidate for the applications in flexible spintronics.