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Author: search.filters.author.Chueh, Yu-LunSubject: search.filters.subject.CIGS

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    Growth and characterization of Cu(In,Ga)Se-2 thin films by nanosecond and femtosecond pulsed laser deposition
    (2014-06-02)
    Chen, Shih-Chen
    ;
    Hsieh, Dan-Hua
    ;
    Jiang, Hsin
    ;
    Liao, Yu-Kuang
    ;
    Lai, Fang-I
    In this work, CuIn1-xGaxSe2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu-2 (-) Se-x, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.
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    Characterization of large area Cu(In,Ga)Se-2 nanotip arrays via photoluminescence
    (2012)
    Liao, Yu-Kuang
    ;
    Lin, Woei-Tyng
    ;
    Hsieh, Dan-Hua
    ;
    Kuo, Shou-Yi
    ;
    Lai, Fang-I
    In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se-2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar+ milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.