<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

1997 - 19983

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Dai, BTSubject: search.filters.subject.charging damage

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    Charging damages to gate oxides in a helicon O-2 plasma
    (1997-12-01)
    Lin, W
    ;
    Kang, TK
    ;
    Perng, YC
    ;
    Dai, BT
    ;
    Cheng, HC
    After the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.
  • Thumbnail Image
    Item type:Item,
    Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
    (1998-07-01)
    Lin, W
    ;
    Kang, TK
    ;
    Perng, YC
    ;
    Dai, BT
    ;
    Cheng, HC
    The etching parameters of aluminum in the helicon wave plasma are characterized to elucidate the mechanism of charging damage. By increasing the ion energy and decreasing the plasma density via increase of the bias power and decrease of the source power, respectively, we can significantly reduce charging damage, On the basis of this concept, we develop a two-step etching technique to suppress the charging damage without selectivity loss. Such a high-density plasma etching technique will be very suitable for the formation of high-density, and narrow-line interconnects.
  • Thumbnail Image
    Item type:Item,
    Charging damages to gate oxides in a helicon O-2 plasma
    (1997-12-01)
    Lin, W
    ;
    Kang, TK
    ;
    Perng, YC
    ;
    Dai, BT
    ;
    Cheng, HC
    After the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.