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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Dai, BTSubject: search.filters.subject.electroplating

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Now showing 1 - 3 of 3
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    Item type:Item,
    Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
    (2002-08-01)
    Shieh, JM
    ;
    Chang, SC
    ;
    Dai, BT
    ;
    Feng, MS
    ;
    材料科學與工程學系
    Complete filling of 0.13-mum vias and deposition of Cu with a low resistivity of about 2.3 muOmega(.)cm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400degreesC for 30 s, the resistivity was further reduced to similar to1.9 muOmega(.)cm.
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    Item type:Item,
    Investigation of carrying agents on microstructure of electroplated Cu films
    (2002-11-01)
    Shieh, JM
    ;
    Chang, SC
    ;
    Dai, BT
    ;
    Feng, MS
    ;
    材料科學與工程學系
    Adding high molecular-weight polyethylene glycol (PEG) as a carrying agent benefits Cu electroplating from the viewpoint of an increase in both filling capability and films' conductivity, when plated in a lower current-density region. On electroplating in a higher current-density region, a gradually decreasing grain size from the top to bottom of Cu films occurs in the electrolyte without PEG or with PEG200. In comparison, sharp grains are formed for the mentioned multi-domain crystallization for those films deposited by the electrolyte containing PEG2000 or PEG6000 due to its lower surface tension which facilitates grain growth along the higher electric field. The used concentration of PEG was flexible due to the fact that the surface morphology, resistivity and deposition rate of deposited films remained almost unchanged over a wide PEG concentration range.
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    Item type:Item,
    Technology of electroplating copper with low-K material a-C : F for 0.15 mu m damascene interconnection
    (2000)
    Shieh, JM
    ;
    Suen, SC
    ;
    Lin, KC
    ;
    Chang, SC
    ;
    Dai, BT
    In our work, fluorinated amorphous carbon films (a-C:F) was deposited by PECVD. The amorphous carbon films (a-C:F) with low dielectric constant (K similar to2.3), thermal stability (higher than 400 degreesC) and acceptable adhesion to cap-layer such as SiOF was obtained by optimum of content ration between carbon with fluorine and adding few SiH4 for improvement of adhesion. The etching profile with high aspect ratio and etching selection ration more than 50 (a-C:F/SiOF) were obtained by etching gas of N-2+O-2. Furthermore, we demonstrated the technology of electroplating copper in trenches or vias as small as 0.15 mum, 6:1 AR The wetting agent system was consisted of mainly two molecular weights polyethylene glycols (PEG). The small molecular weight PEG (200) with better diffusion ability for reducing the surface tension and the larger PEG (2000) enhancing grain growth control was proposed for the first time to wet the inner portion of the sub-150 nm damascene feature. The leveling agent system was mainly heterocyclic compound contained N, S atoms offering sufficient activation over-potential and selective inhibition gradient.