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Author: search.filters.author.Dai, BT

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Now showing 1 - 10 of 52
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    Charging damages to gate oxides in a helicon O-2 plasma
    (1997-12-01)
    Lin, W
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    Kang, TK
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    Perng, YC
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    Dai, BT
    ;
    Cheng, HC
    After the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.
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    A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma
    (1998-06-01)
    Cheng, HC
    ;
    Lin, W
    ;
    Kang, TK
    ;
    Perng, YC
    ;
    Dai, BT
    A two-step etching has been performed to eliminate the plasma charging damages during helicon-wave plasma metal etching without selectivity loss, This technique utilized a normal etching recipe to remove the Al film and followed by an optimized etching recipe for the overetching step. By increasing the bias power and decreasing the source power, the optimum etching recipe can cause the plasma more directionally and reduce the Al charging damages. Eventually, the damage mechanism was also reported.
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    Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
    (1998-07-01)
    Lin, W
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    Kang, TK
    ;
    Perng, YC
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    Dai, BT
    ;
    Cheng, HC
    The etching parameters of aluminum in the helicon wave plasma are characterized to elucidate the mechanism of charging damage. By increasing the ion energy and decreasing the plasma density via increase of the bias power and decrease of the source power, respectively, we can significantly reduce charging damage, On the basis of this concept, we develop a two-step etching technique to suppress the charging damage without selectivity loss. Such a high-density plasma etching technique will be very suitable for the formation of high-density, and narrow-line interconnects.
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    The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
    (1999-10-01)
    Chang, TC
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    Liu, PT
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    Mor, YS
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    Sze, SM
    ;
    Yang, YL
    The organic silsesquioxane, methylsilsesquioxane (MSQ), has a low dielectric constant because of its lower film density compared to thermal oxide. However. the quality of MSQ film is degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In this work, we studied the N2O plasma treatment for improving the quality of MSQ. The leakage current of MSQ decreases as the N2O plasma treatment time is increased. The dielectric constant of N2O plasma-treated sample remains constant (similar to 2.7). In addition, the thermal stability of MSQ film can be enhanced. The role of N2O plasma is to convert the surface layer of organic MSQ into inorganic type by decomposition of the alkyl group and thus form a passivation layer. The inert passivation layer enhances the resistance to moisture uptake and O-2 plasma attack. Therefore, N2O plasma-treatment greatly improves the quality of low k MSQ film and removes the issue of photoresist stripping in the integrated process. (C) 1999 The Electrochemical Society. S0013-4651(98)10-071-X. All rights reserved.
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    Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
    (1999-10-15)
    Hu, TC
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    Chiu, SY
    ;
    Dai, BT
    ;
    Tsai, MS
    ;
    Tung, IC
    A novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
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    Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
    (2000-11-01)
    Chiu, SY
    ;
    Shieh, JM
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    Chang, SC
    ;
    Lin, KC
    ;
    Dai, BT
    Gap-filling dynamics of several different species of additives for copper electrodeposition was investigated by monitoring the cross section of a partially filled copper profile on the scanning electron microscopy photo. The filling ration Deltay/Deltax between "bottom-up" with "sidewall shift" was found to be proportional to the filing power of additives. The adsorption-diffusion model combined with cathode polarization and cyclic voltammetric stripping measurements was employed to explain the attribution of additives in superfilling phenomena. The superfilling dynamics was achieved under behavior of additives providing selective inhibition gradient within the damascene feature. By means of those analyses, we have optimized the appropriate amount of additives and achieved the superfilling performance for 0.15 mum vias with aspect ratio 6 by an acid-copper electrolyte with polyethylene glycol, Cl-, and 2-mercaptopyridine (2-MP). Due to the additive of 2-MP, chelate formed which enhanced adsorption ability on Cu-0 surface, and the concentration gradient between side-wall shift and bottom-up in the damascene became high enough to attend superfilling electroplating. (C) 2000 American Vacuum Society. [S0734-211X(00)13506-1].
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    Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection
    (2001-05-01)
    Shieh, JM
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    Suen, SC
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    Tsai, KC
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    Dai, BT
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    Wu, YC
    Fluorinated amorphous carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition with low dielectric constant (K similar to2.3), thermal stability (higher than 400 degreesC) and acceptable adhesion to a cap layer such as SiOF or SiO2 were obtained by varying the range of content ratios between carbon and fluorine, the rf power, the process pressure and the base temperature. Standard x-ray photoelectron spectroscopy and thermal desorption spectroscopy metrologies were employed to characterize the deposited a-C:F films. The damascene pattern with 0.15 mum and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2) was implemented by a mixture of etching gases of N-2+O-2. The bias power, rf power and gas hows were incorporated to optimize the etching recipe for achieving a damascene profile with a high aspect ratio. The scanning electron microscope results showed that a better etch profile can be obtained at higher bias power. In our damascene architecture, the etching stop layer or hard mask of both SiOF and SiO2 was studied. The SiOF, providing a lower dielectric constant than SiO2, would especially reduce the entire effective dielectric constant. Furthermore, we integrated electroplated copper into trenches or vias as small as 0.15 mum, with aspect ratio of 6. (C) 2001 American Vacuum Society.
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    Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
    (2001-05-01)
    Chang, SC
    ;
    Shieh, JM
    ;
    Lin, KC
    ;
    Dai, BT
    ;
    Wang, TC
    Through elucidating the effects of current density, cupric ion concentration, bath temperature, and air agitation on plating uniformity and filling capability of copper electroplating, the deposition of copper in an acid copper electrolyte will be illustrated to scale down to the sub-0.13 mum features with uniform plating, which is required by chemical mechanical polishing in current damascene techniques. In order to achieve the defect-free filling in sub-0.13 mum vias and trenches, the electrolyte must be composed of proper amounts of cupric ions, sulfuric acid, chloride ions, wetting agent, and filling promoter. The supplied current controlled at a lower current density, agitation acceded to the electroplating process were found as further keys. In the electrolyte, the filling promoter was consisted essentially of thiazole derivatives with benzyl groups and amino-group (-NH2) offering sufficient inhibition on copper depositing and selective inhibition gradient. Moreover, a lower resistivity film and higher filling capability could be obtained by using periodic pulse current plating as compared with direct current plating. (C) 2001 American Vacuum Society.
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    Selective copper metallization by electrochemical contact displacement with amorphous silicon film
    (2001-07-01)
    Lee, YP
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    Tsai, MS
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    Hu, TC
    ;
    Dai, BT
    ;
    Feng, MS
    In this study, we proposed a novel selective Cu metallization method by means of Si chemical mechanical polishing (CMP) and electrochemical Cu contact displacement from a-Si. The galvanic Cu deposition which involves the electrochemical redox reaction between cupric ions and silicon atoms could be carried out at room temperature in the HF aqueous solution. This selective Cu metallization method is promising for overcoming the obstacles in the current damascene process, such as the limitation of depositing comformally Cu seed into high aspect ratio trenches by physical vapor deposition for the following void-free Cu electroplating and nonplanarity issues after multistep CMP, such as Cu dishing and dielectric erosion. (C) 2001 The Electrochemical Society.
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    Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
    (2002-03-01)
    Hsu, JW
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    Chiu, SY
    ;
    Tsai, MS
    ;
    Dai, BT
    ;
    Feng, MS
    The electrochemical behavior of polishing copper with colloidal silica abrasive slurry formulated with KIO3 oxidizer has been investigated. For planarization of the surface morphology, the control of the surface passivation of Cu is critical during polishing. KIO3 is not only all oxidizer but also a passivator for copper in an acidic slurry by forming a CuI layer on the surface. With alkaline slurry, Cu2O is the primary corrosion product on the Cu surface. The copper corrosion rate and removal rate can be decreased dramatically with increasing slurry pH. The low corrosion resistance or high corrosion susceptibility of Cu as determined by electrochemical measurements is the basis for the high removal rates. The copper removal rate is reduced from 4600 to 650 Angstrom/min when the slurry pH is increased from 2 to 5: and the copper removal rate levels off atpH 7 with a steady-state removal rate of 200 Angstrom/min, (C) 2002 American Vacuum Society.