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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Dunin-Borkowski, Rafal E.

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    Observation of oxygen pyramid tilting induced polarization rotation in strained BiFeO3 thin film
    (1970-01-01)
    Song, Dongsheng
    ;
    Liu, Heng-Jui
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    Kovacs, Andras
    ;
    Dunin-Borkowski, Rafal E.
    ;
    Chu, Ying-Hao
    Oxygen octahedral tilting has been recognized to strongly interact with spin, charge, orbital, and lattice degrees of freedom in perovskite oxides. Here, we observe a strain-driven stripe-like morphology of two supertetragonal (monoclinic Cc and Cm) phases in the strained BiFeO3/LaAlO3 thin films. The two supertetragonal phases have a similar giant axial ratio but differences in oxygen pyramid tilting mode. Especially, the competition between polar instability and oxygen pyramid tilting is identified using atomically resolved scanning transmission electron microscopy, leading to the polarization rotation across the phase boundary. In addition, microtwins are observed in the Cc phase. Our findings provide new insights of the coupling between ferroelectric polarization and oxygen pyramid tilting in oxide thin films and will help to design novel phase morphology with desirable ferroelectric polarization and properties for new applications in perovskite oxides.
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    Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces
    (2018-02-01)
    Huang, Bo-Chao
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    Yu, Pu
    ;
    Chu, Y. H.
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    Chang, Chia-Seng
    ;
    Ramesh, Ramamoorthy
    We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.