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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.FENG, MSSubject: search.filters.subject.LP-MOCVD

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    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
  • Thumbnail Image
    Item type:Item,
    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
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    SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-10-01)
    GUO, JD
    ;
    FENG, MS
    ;
    PAN, FM
    ;
    材料科學與工程學系
    ;
    電子工程學系及電子研究所
    Se-doped GaN films are grown for the first time by low-pressure metalorganic chemical vapor deposition (LP-MOCVD), in which H2Se is used as the Se source sas. Effects of Se doping on electrical properties of GaN films are reported. Se atoms tend to out-diffuse to the surface of the GaN film at high tempi rature. The N atomic percentage is influenced by the incorporation of H2Se in the MOCVD process. The carrier concentration was found to be significantly affected by the surface defects which develop at high H2Se dosages. The highest free electron concentration obtained is about 1.5 x 10(18) cm(-3). Increasing the growth temperature from 1000 degrees C to 1050 degrees C reduces the maximum carrier concentration to about 7x10(17) cm(-3).